STRUKTUR DAN KOMPOSISI KIMIA BAHAN SEMIKONDUKTOR LAPISAN TIPIS Sn(S0,8 Te0,2) HASIL PREPARASI DENGAN TEKNIK EVAPORASI VAKUM STRUCTURE AND CHEMICAL COMPOTITION OF SEMICONDUCTOR MATEERIAL Sn(S0,8 Te0,2) THIN FILM PREPARATION RESULT BY VACUM EVAPORATION TECNIQUES - Siti Khoirunisa'; Ariswan Ariswan (Jurnal Ilmu Fisika dan Terapannya (JIFTA), 2017)
AbstrakPenelitian ini bertujuan untuk menumbuhkan lapisan tipis Sn(S0,8Te0,2) dengan teknik evaporasi vakum untuk mempelajari variasi jarak spacer,karakter lapisan tipis Sn(S0,8Te0,2) sebagai semikonduktor dengan karakterisasi struktur kristal, morfologi permukaan, dan komposisi kimia.Variasi jarak spacer ada tiga, yaitu 10 cm, 15 cm dan 25cm.  Sampel dikarakterisasi menggunakan XRD (X-Ray Diffraction) untuk mengetahui struktur kristal, SEM (Scanning Electron Microscopy) untuk mengetahui morfologi permukaan, dan EDAX (Energy Dispersive Analysis X-RD) untuk mengetahui komposisi kimia. Hasil menunjukkan bahwa variasi jarak   menyebabkan perbedaan kualitas kristal lapisan tipis tiap sampel, yang ditandai dengan adanya perbedaan intensitas spectrum,ketiga sampel memiliki struktur kristal orthorhombik  dengan parameter kisi menggunakan metode analitik, sampel 1 (jarak spacer 10cm): a = 8,932 (; b =3,926 (;  c = 13,870 (, sampel 2 (jarak spacer 15cm): a = 8,551 (; b =3,766 (;  c = 14,659 (, sampel 3 (jarak spacer 25cm): a = 8,882 (; b =3,887 (;  c = 14,077 (.. Permukaan lapisan tipis homogen terdiri atas butiran berukuran µm dan µm serta hasil karakterisasi EDAX diperoleh perbandingan unsur Sn:S:Te yaitu 1: 0,80 : 0,14.Kata kunci:      struktur kristal, morfologi permukaan, , spacer, komposisi kimia kristal Sn(S0,8Te,2)AbstractThis research aims to grow Sn(S0,8Te0,2) thin films by vacuum evaporation method to study characterization of Sn(S0,2Te0,8) thin films as smiconducter materials which includes characterization of the crystal structure, surface morphology, and chemical composition. The spacer were varied for 3 times, namely 10 cm, 15 cm and 25cm. Samples were characterized by XRD (X-Ray Diffraction) to determine the crystal structure, SEM (Scanning Electron Microscopy) to determine the surface morphology, and EDAX (Energy Dispersive Analysis X-RD) to determine the chemical composition. The result showed that spacer variations caused the difference in thin films quality, marked by the difference of spectrum intensity,the 3 samples had orthorhombic crystal structure with the lattice parameters using analitical method were sample 1 (the spacer 10 cm): a = 8,932 (; b =3,926 (;  c = 13,870 (, sample 2 (the spacer 15 cm): a = 8,588 (; b =3,751 (;  c = 13,907 (,and sample 3 (the spacer 25 cm):a = 8,882 (; b =3,887 (;  c = 14,077 (. The surface of sample was homogenous and consisted of grains with µm andµm size. Thin film contains elements of Sn, S, and Te with the chemical composition percentages were the molarity comparisons of Sn : S : Te was 1: 0,80 : 0,14.Keywords:       crystal structure, surface morphology , spacer, chemical composition Sn(S0,8Te,2)