Efek Variasi Substrat Terhadap Sifat Listrik Boron Nitrida - Asep Wildan Sugiman; Ismudiati Puri Handayani; Memoria Rosi (eProceedings of Engineering, 2019)
Abstrak Tugas akhir ini mempelajari sebaran lapisan BN dan sifat lstrik BN (Boron Nitrida) yang dideposisidi atas substrat Polyethylene Terephthalate (PET), Indium Tin Oxide/Polyethylene Terephthalate(ITO/PET), dan SiO2.Lapisan BN dibuat dengan cara memodifikasi 1 mg/mL BN menggunakanmetode eksfoliasi fasa cair yang ditambahkan interkalator 2 mg/mL NaOH dan diikuti dengan dropcasting di atas substrat. Sebaran lapisan BN pada PET dan ITO/PET terlihat merata, sedangkanpada SiO2 terlihat daerah tipis dan sebagian tebal. Perilaku semikonduktor terlihat pada BN/PETyang menghasilkan arus -315 nA sampai 154 nA saat tegangan divariasi dari -10 v sampai 10 vdengan Vth = 2V dan memiliki resistivitas 0,29x104 Î©cm. Perilaku yang sama ditunjukan olehBN/SiO2 yang menghasilkan arus -0,7 mA sampai 0,1 mA saat tegangan divariasi dari -10V sampai 10V dengan Vth = 4V dan mempunyai resistivitas 1,1 Î©cm. Hal ini berbeda pada BN pada ITO/PETyang menunjukkan perilaku gabungan insulator dan semikonduktor serta menghasilkan arusberkisar antara -4,3 mA sampai 3,14 mA saat tegangan divariasi dari -5V sampai 5V dan memilikiresistivitas 0,02 Î©cm. Dapat disimpulkan bahwa substrat mempengaruhi sebaran BN, ketebalanlapisan BN, dan sifat listrik BN. Namun tidak ada pengaruh substrat terhadap serapan dan emisispektrum cahaya. Kata Kunci: BN, PET, ITO, SiO2, Eksfoliasi, Sifat ListrikAbstract This final project aims to understand the distribution of Boron Nitride (BN) layer and the electricalproperties of BN deposited on Polyethylene Terephthalate (PET), Indium Tin Oxide/PolyethyleneTerephthalate (ITO/PET), and SiO2 substrate. The BN layer was created by modifying 1 mg/mL BNusing liquid phasse exfoliation method which was added by intercalator 2 mg/mL NaOH followed bydrop casting deposition on top of the substrates. BN layers were distributed more uniform on PET andless uniform on ITO/PET, while BN layers on SiO2 consisted of thick and thin layers. Electricalcharacterization was conducted by varying bias voltage and observing output current. Typicalsemiconductor characteristic I-V curve was observed on BN/PET. The current varies between -315 nAto 154 nA with bias voltage ranging from -10 v to 10 v and the Vth = 2 v. It has resistivity of 0,29x10Î©cm. The same characteristic is showed by BN/SiO2 which produces currents -0.7 mA to 0.1 mA withbias voltage ranging from -10 to 10v and the Vth = 4 v. It has resistivity of 1.1 Î©cm. This is differentwith BN deposited on ITO/PET showing both insulators and semiconductors which produces currents ranging from -4.3 mA to 3.14 mA with bias voltage ranging from -5 v to 5 v. It has resistivity of 0.02Î©cm. It can be concluded that substrates influence the BN layer distribution, BN layer thickness, andelectrical properties. However, there is no effect on optical spectrum measurement. Keywords: BN, PET, ITO, SiO2, Exfoliation, Electrical Properties, Mechanical Properties.