Article Per Year (5 Year)
p-Index From 2021 - 2026
0
P-Index
This Author published in this journals
All Journal International Journal of Electrical and Computer Engineering TELKOMNIKA (Telecommunication Computing Electronics and Control)
Ahmed M. Dinar
Universiti Teknikal Malaysia Melaka (UTeM)
Computer Science & IT Electrical & Electronics Engineering

Published : 9 Documents Claim Missing Document
Claim Missing Document
Check
Articles

Found 2 Documents
Search
Journal : International Journal of Electrical and Computer Engineering

 1 
Comprehensive identification of sensitive and stable ISFET sensing layer high-k gate based on ISFET/electrolyte models Ahmed M. Dinar; A. S. Mohd Zain; F. Salehuddin
International Journal of Electrical and Computer Engineering (IJECE) Vol 9, No 2: April 2019
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (733.681 KB) | DOI: 10.11591/ijece.v9i2.pp926-933

Abstract

The ISFET sensing membrane is in direct contact with the electrolyte solution, determining the starting sensitivity of these devices. A SiO2 gate dielectric shows a low response sensitivity and poor stability. This paper proposes a comprehensive identification of different high-k materials which can be used for this purpose, rather than SiO2. The Gouy-Chapman and Gouy-Chapman-Stern models were combined with the Site-binding model, based on surface potential sensitivity, to achieve the work objectives. Five materials, namely Al2O3, Ta2O5, Hfo2, Zro2 and SN2O3, which are commonly considered for micro-electronic applications, were compared. This study has identified that Ta2O5 have a high surface potential response at around 59mV/pH, and also exhibits high stability in different electrolyte concentrations. The models used have been validated with real experimental data, which achieved excellent agreement. The insights gained from this study may be of assistance to determine the suitability of different materials before progressing to expensive real ISFET fabrication.
Side lobe reduction in array antenna by using novel design of EBG Muhannad Kaml Abdulhameed; M. S. Mohamad Isa; I. M. Ibrahim; Z. Zakaria; Mowafak K. Mohsen; Mothana L. Attiah; Ahmed M. Dinar
International Journal of Electrical and Computer Engineering (IJECE) Vol 10, No 1: February 2020
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (824.228 KB) | DOI: 10.11591/ijece.v10i1.pp308-315

Abstract

A novel design of EBG is used to replace the mushroom like EBG for surrounding the array patch antenna. In order to improve its radiation performances, Electromagnetic band stop for reducing the surface waves effects is presented. The novel design of Triple Side Slotted EBG (TSSEBG) showed an improvement in the antenna efficiency, directivity and gain as compared to the reference antenna without using EBG, due to reduce the surface waves effects which leads to decrease the side lobes. TSSEBG has been introduced by some modifications in conventional mushroom-like EBG structure. Reducing the complexity was achieved by reducing the number of unit cells and vias, in case of used TSSEBG instead of mushroom like EBG. Additionally, the TSSEBG provided triple band gap compared with mushroom like EBG structure which had only one band gap frequency at 6 GHz. The placement of TSSEBG is a flexible structure which provides a good choice in the antenna applications. The simulation results of array patch antenna with and without mushroom like EBG and TSSEBG are arranged in Table 1. This structure has vast applications in satellite communications.
Co-Authors A. A. M. Isa A. A. Md Isa A. S. Mohd Zain AS Mohd Zain F. Salehuddin I. M. Ibrahim M . K. Abdulhameed M. K. Abdulhameed M. S. M Isa M. S. M. Isa M. S. Mohamad Isa M.K. Abdulhameed Mothana L. Attiah Mowafak K. Mohsen Mowafak K. Mohsen Mowafak K. Mohsen Muhannad Kaml Abdulhameed Z. Zakaria Zahriladha Zakaria