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Hak Kee Jung
Kunsan National University
Computer Science & IT Electrical & Electronics Engineering

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Journal : International Journal of Electrical and Computer Engineering

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Projected Range Dependent Tunneling Current of Asymmetric Double Gate MOSFET Hak Kee Jung
International Journal of Electrical and Computer Engineering (IJECE) Vol 6, No 1: February 2016
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (139.227 KB) | DOI: 10.11591/ijece.v6i1.pp113-119

Abstract

This study is to analyze the changes of tunneling current according to projected range, a variable of Gaussian function of channel doping function of Asymmetric Double Gate; ADG MOSFET. In MOSFET with channel length below 10 nm, tunneling current occupies a large percentage among off-currents. The increase of tunneling current has a large effect on the characteristics of subthreshold such as threshold voltage movement and the decline of subthreshold swing value, so the accurate analysis of this is being required. To analyze this, potential distribution of series form was obtained using Gaussian distribution function, and using this hermeneutic potential distribution, thermionic emission current and tunneling current making up off-current were obtained. At this point, the effect that the changes of projected range, a variable of Gaussian distribution function, have on the ratio of tunneling current among off-currents was analyzed. As a result, the smaller projected range was, the lower the ratio of tunneling current was. When projected range increased, tunneling current increased largely. Also, it was observed that the value of projected range which the ratio of tunneling current increased changed according to maximum channel doping value, channel length, and channel width.
The Impact of Tunneling on the Subthreshold Swing in Sub-20 nm Asymmetric Double Gate MOSFETs Hak Kee Jung; Sima Dimitrijev
International Journal of Electrical and Computer Engineering (IJECE) Vol 6, No 6: December 2016
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (629.084 KB) | DOI: 10.11591/ijece.v6i6.pp2730-2734

Abstract

This paper analyzes the subthreshold swing in asymmetric double gate MOSFETs with sub-20 nm channel lengths. The analysis of the carrier transport in the subthreshold region of these nano scaled MOSFET includes tunneling as an important additional mechanism to the thermionic emission. It is found that the subthreshold swing is increasing due to tunneling current and that the performance of nano scaled MOSFETs is degraded. The degradation of the subthreshold swing due to tunneling is quantified using analytical potential distribution and Wentzel–Kramers–Brillouin (WKB) approximation in this paper. This analytical approach is verified by two dimensional simulation. It is shown that the degradation of subthreshold swing increases with both reduction of channel length and increase of channel thickness. We also show that the subthreshold swing is increasing in case of different top and bottom gate oxide thicknesses.
Co-Authors Sima Dimitrijev