Article Per Year (5 Year)
p-Index From 2021 - 2026
0
P-Index
This Author published in this journals
All Journal BERKALA FISIKA
H. Syafutra
Department of Physics, Bogor Agricultural University Jl. Darmaga Gedung Wing S Bogor16680, Indonesia
Physics

Published : 2 Documents Claim Missing Document
Claim Missing Document
Check
Articles

Found 2 Documents
Search
Journal : BERKALA FISIKA

 1 
Uji Sifat Listrik Film Tipis LiTao3 dan LiTaFe2O3 Indro, M. N.; Sastri, B.; Nady, L.; Ridwan, E.; Syafutra, H.; Irzaman, Irzaman; Siswadi, Siswadi
BERKALA FISIKA Vol 13, No 2 (2010): Berkala Fisika, Edisi Khusus
Publisher : BERKALA FISIKA

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (509.413 KB)

Abstract

Lithium Tantalat (LiTaO3) pure and LF Thin films has been done is cube-shaped Ferium Oxide Fe2O3 (LFT) with a cube-shaped variation 0%, 2.5%, 5% and 7.5% above the substrate Si (100) p-type using a chemical solution deposition (CSD) method  by spin coating technique at 3000 rpm rotational speed for 30 seconds. LF Thin films made with 1 M concentration and annealing at a temperature of 850 ° C for Si substrates. Thin films on p-type silicon substrates were characterized thickness using volumetric method, characterization conductance by using LCR meter, test the current-voltage characterization (IV curve) using Keithley Meter IV model 2400, characterization of dielectric constants and time constants using the oscilloscope and function generator and pyroelectric characterization using Wetsteind bridge circuit which in furnace (combustion) to a temperature of 1300C by calculating the increase in temperature variation. From the characterization results indicate thickness thickness increases with the number pendadah ferium given oxide. IV characterization results showed that LF and LFT thin film is a dielectric resistor.Hasil are contained in a thin film on p-type silicon substrate varies in accordance with the addition pendadah used were 0%, 2.5%, 5% and 7.5%.  Keywords: LF, LFT, thin film, CSD, spin coating, annealing, cube-shaped, thickness, dielectric constant, time constant-voltage current, ferium oxides, pyroelectric. 
Penerapan Film Tipis Ba0.25Sr0.75TiO3 (BST) Yang Didadah Ferium Oksida Sebagai Sensor Suhu Berbantukan Mikrokontroler Ardian, A.; Nady, L.; Erviansyah, R.; Syafutra, H.; Irzaman, Irzaman; Siswadi, Siswadi
BERKALA FISIKA Vol 13, No 2 (2010): Berkala Fisika, Edisi Khusus
Publisher : BERKALA FISIKA

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (355.503 KB)

Abstract

Ferroelectric material originating from Barium Strontium Titanate (BST), is expected to have high energy because it has a dielectric constant and high charge storage capacity [6]. Materials produced by the process of ferium dopan, it is hoped will be a temperature sensor. If, materials BST and BFST (Barium Ferium Strontium Titanate) subjected to the temperature (material change that temperature), and the resulting voltage, then this material can be applied as a temperature sensor using a microcontroller. Microcontroller that used is ATMega 8535 with internal ADC. Voltage was generated, will be reinforced with a voltage amplifier (OpAmp) and will be processed into digital data at the ATMega8535 internal ADC (Analog Digital Converter).Incoming digital data will be processed and displayed in the view Microcontroller-based desktop applications Delphi 7. The material to be tested is material BST, BFST 5%, and BFST 15%.   Keyword: BST, Temperature sensor, ATMEGA 8535, ADC, Delphi 7
Co-Authors A. Ardian B. Sastri E. Ridwan Irzaman, Irzaman L. Nady M. N. Indro R. Erviansyah Siswadi Siswadi