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All Journal International Journal of Electrical and Computer Engineering
Korlapati Satyanarayana Murthy
Koneru Lakshmaiah Education Foundation
Computer Science & IT Electrical & Electronics Engineering

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Journal : International Journal of Electrical and Computer Engineering

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Reconfigurable negative bit line collapsed supply write-assist for 9T-ST static random access memory cell Chokkakula Ganesh; Fazal Noorbasha; Korlapati Satyanarayana Murthy
International Journal of Electrical and Computer Engineering (IJECE) Vol 13, No 4: August 2023
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijece.v13i4.pp3747-3755

Abstract

This paper presents a reconfigurable negative bit line collapsed supply (RNBLCS) write driver circuit for the 9T Schmitt trigger-based static random-access memory (SRAM) cell (9T-ST), significantly improving write performance for real-time memory applications. In deep sub-micron technology, increasing device parameter deviations significantly reduce SRAM cells' write-ability. The proposed RNBLCS write-assist driver for 9T-ST SRAM cell has 0.84×, 0.48×, 0.27× optimized write access delay and 1.05×, 1.08×, 1.19× improvement in write static noise margin (WSNM), 1.05×, 1.13×, and 1.39× improvement in write margin (WM), 0.96×, 0.89× and 0.72× minimum write trip-point (WTP) from transient-negative bit line (Tran-NBL), capacitive charge sharing (CCS), and conventional write circuits respectively. The proposed RNBLCS is functionally verified using a synopsys custom compiler with a 16 nm BSIM4 model card for bulk complementary metal-oxide semiconductor (CMOS).
Co-Authors Chokkakula Ganesh Fazal Noorbasha