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Mohd Ibrahim, Imran
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Electrical & Electronics Engineering

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Journal : Bulletin of Electrical Engineering and Informatics

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Microstrip antenna with reflector and air gap for short range communication in 900 MHz band Shairi, Noor Azwan; Zakaria, Zahriladha; Mohd Ibrahim, Imran; Osman, Anwar Faizd
Bulletin of Electrical Engineering and Informatics Vol 13, No 2: April 2024
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/eei.v13i2.5515

Abstract

This paper proposes a microstrip antenna that was made of a microstrip fed slot with a complimentary stub on a single dielectric medium. This antenna was integrated with a reflector and air gap for the application of short range communication (SRC) in a 900 MHz band. Analyses were made on the dimension of the reflector and the height of the air gap towards the antenna performance. Besides, an antenna field test was done for the propagation distance of the proposed antenna. As a result, with the antenna size of 13,770 mm2 , the measured return loss was -10.79 dB and the directivity gain was 7.44 dBi. Besides, with the effective isotropic radiated power (EIRP) of 7.44 dBm, it was predicted that at 100 m, the received signal would be around 60 to 70 dBm. Therefore, a high gain was produced by using a reflector with air gap and a compact size was achieved if compared to conventional high gain antenna designs such as Yagi Uda. Thus, it is suitable for a communication device such as the SRC application.
High isolation of SPDT PIN diode switch using switchable dumbbell-shaped DGS in millimeter wave 28 GHz band Mohd Yasin, Fatin Nadiah; Shairi, Noor Azwan; Othman, Adib; A. Majid, Huda; Zakaria, Zahriladha; Mohd Ibrahim, Imran; Jamaluddin, Mohd Haizal
Bulletin of Electrical Engineering and Informatics Vol 12, No 6: December 2023
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/eei.v12i6.6071

Abstract

This paper proposes a high isolation of single pole double throw (SPDT) PIN diode switch using switchable dumbbell-shaped defected ground structure (DGS). The proposed SPDT switch was designed for radio frequency (RF) front-end transceiver of antenna array multiple input multiple output (MIMO) in millimeter wave 28 GHz band. The switchable dumbbell-shaped DGS can be switched between allpass and bandstop responses where the bandstop response of the DGS can be utilized as a high isolation in the SPDT PIN diode switch circuit. A simple mathematical analysis is explained in this paper for the bandstop and allpass responses of the switchable dumbbell-shaped DGS. The propose SPDT switch was designed based on Roger RT/Duroid 5880 with 0.254 mm thickness and relative dielectric constant of 2.2. The simulated result showed that the proposed SPDT PIN diode switch produced an isolation of 36.36 dB at 27.3 GHz (center of 28 GHz band), which was 63% higher than the conventional SPDT design.
X-band and Ku-band PIN diode loaded reflectarray unit cells with adaptive frequency switching Inam Abbasi, Muhamamad; Dali Khan, Sher; Hashim Dahri, Muhammad; Mohd Ibrahim, Imran; Hafizah Sulaiman, Noor
Bulletin of Electrical Engineering and Informatics Vol 14, No 1: February 2025
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/eei.v14i1.8798

Abstract

The fast advancement of intelligent new applications has led to the creation of high-performance antennas. Reflectarrays (RAs), also known as planar reflectors, are seen as promising antennas for several such modern-day applications. This work presents a comprehensive investigation of frequency switchable RA antennas operating in the X-band and Ku-band frequency ranges. Various strategic configurations of combined slots have been suggested, using integrated P-layer, I-layer, and N-layer (PIN) diodes, with the purpose of creating unit cells in RAs that may switch frequencies and exhibit a gradual change in phase distribution. The frequency variation achieved in X-band for the ON state of PIN diodes is from 8.13 GHz to 11.69 GHz, whereas for the OFF state it is from 8.13 GHz to 11.68 GHz. Similarly, for Ku-band ON and OFF states of PIN diodes provided frequency variations of 13.6 GHz to 17.1 Ghz and 12.8 Ghz to 16.6 GHz respectively. Frequency tunability of 0.85 GHz and 0.72 GHz has been successfully achieved in X-band and Ku-band.
Co-Authors Dali Khan, Sher Hafizah Sulaiman, Noor Hashim Dahri, Muhammad Huda A. Majid, Huda Inam Abbasi, Muhamamad Jamaluddin, Mohd Haizal Mohd Yasin, Fatin Nadiah Osman, Anwar Faizd Othman, Adib Shairi, Noor Azwan Zahriladha Zakaria