Noise Characterization in InAlAs/InGaAs/InP pHEMTs for Low Noise Applications

Z. A. Djennati (University of Tlemcen, Algeria)
K. Ghaffour (Professor at the University of Tlemcen, Algeria)

International Journal of Electrical and Computer Engineering
Vol 7, No 1: February 2017

In this paper, a noise revision of an InAlAs/InGaAs/InP psoeudomorphic high electron mobility transistor (pHEMT) in presented. The noise performances of the device were predicted over a range of frequencies from 1GHz to 100GHz. The minimum noise figure (NFmin), the noise resistance (Rn) and optimum source impedance (Zopt) were extracted using two approaches. A physical model that includes diffusion noise and G-R noise models and an analytical model based on an improved PRC noise model that considers the feedback capacitance Cgd. The two approaches presented matched results allowing a good prediction of the noise behaviour. The pHEMT was used to design a single stage S-band low noise amplifier (LNA). The LNA demonstrated a gain of 12.6dB with a return loss coefficient of 2.6dB at the input and greater than -7dB in the output and an overall noise figure less than 1dB.