International Journal of Electrical and Computer Engineering
Vol 5, No 3: June 2015

Modelling Electronic Characteristic of InP/InGaAs Double Heterojunction Bipolar Transistor

Berrichi Yamina (University of Tlemcen)
Ghaffour Kherreddine (University of Tlemcen)

Article Info

Publish Date
01 Jun 2015

Abstract

In this paper, we are interested in studying InP/InGaAs heterojunction bipolar transistor NPN type. First and for most we should describe the structure of our simulation, then, we ploted at room temperature: Energy band diagram, Gummel plot, IC-VC characteristic and conduction bands for different values of VBE.  The simulation of this structure has demonstrated the validity of our model and the method of the simulation.

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Journal Info
International Journal of Electrical and Computer Engineering
Website

Abbrev

IJECE

Publisher

Institute of Advanced Engineering and Science

Subject

Computer Science & IT Electrical & Electronics Engineering

Description

International Journal of Electrical and Computer Engineering (IJECE, ISSN: 2088-8708, a SCOPUS indexed Journal, SNIP: 1.001; SJR: 0.296; CiteScore: 0.99; SJR & CiteScore Q2 on both of the Electrical & Electronics Engineering, and Computer Science) is the official publication of the Institute of ...