International Journal of Reconfigurable and Embedded Systems (IJRES)
Vol 8, No 3: November 2019

A body bias technique for low power full adder using XOR gate and pseudo NMOS transistor

Pritty Pritty (Guru Gobind Singh Indraprastha University)
Manoj Kumar (Guru Gobind Singh Indraprastha University)
Mariyam Zunairah (Guru Gobind Singh Indraprastha University)



Article Info

Publish Date
22 Feb 2021

Abstract

Power dissipation is a major issue in digital circuit design. As technology into developed into range, power and delay becomes vital nanometer parameters to ameliorate the performance of the circuit. To minimize the power consumption many low power techniques such as MTCMOS, stacking, body biasing techniques have been reported. In this paper, a new pseudo NMOS adder circuits have presented. It has designed using transmission gate and body bias technique. Simulation has been accomplished by using SPICE tool. The simulation result show the validity of the proposed techniques is reduces power dissipation from 0.367 mW to 0.267 mW and PDP reduced from 19.311pJ to 13.311pJ. Overall improvement of 29% in power consumption and 30% in PDP has obtained.

Copyrights © 2019






Journal Info

Abbrev

IJRES

Publisher

Subject

Economics, Econometrics & Finance

Description

The centre of gravity of the computer industry is now moving from personal computing into embedded computing with the advent of VLSI system level integration and reconfigurable core in system-on-chip (SoC). Reconfigurable and Embedded systems are increasingly becoming a key technological component ...