Bulletin of Electrical Engineering and Informatics
Vol 8, No 1: March 2019

Effect of substrate placement in schott vial to hematite properties

Wan Rosmaria Wan Ahmad (Universiti Teknologi MARA (UiTM))
M. H. Mamat (Universiti Teknologi MARA (UiTM))
A. S. Zoolfakar (Universiti Teknologi MARA (UiTM))
Z. Khusaimi (Universiti Teknologi MARA (UiTM))
A. S. Ismail (Universiti Teknologi MARA (UiTM))
T. N. T. Yaakub (Universiti Teknologi MARA (UiTM))
M. Rusop (Universiti Teknologi MARA (UiTM))



Article Info

Publish Date
01 Mar 2019

Abstract

In the present study, hematite (α-Fe2O3) nanostructures were deposited on fluorine doped tin oxide (FTO) coated glass substrate using sonicated immersion synthesis method. The effect of FTO glass substrate placement in Schott vial during immersion process was studied on the growth of the hematite nanostructure and its properties. XRD pattern has revealed seven diffraction peaks of α-Fe2O3 for both hematite nanostructures samples attributed to polycrystalline with rhombohedral lattice structure. The surface morphologies from FESEM have shown that the hematite nanostructures were grown uniformly in both samples with FTO conductive layer facing up and down. Hematite sample with FTO facing down exhibits a smaller size of nanorod, 26.7 nm average diameter, compared to the hematite sample that FTO face up with 53.8nm average diameter. Optical properties revealed higher transmittance in the sample with FTO facing down, probably due to smaller size of nanostructure. The optical band gap energy plotted and extrapolated at 2.50eV and 2.55eV for FTO face up and FTO face down hematite samples respectively, presenting the sample with FTO face up has a lower optical bandgap energy.

Copyrights © 2019






Journal Info

Abbrev

EEI

Publisher

Subject

Electrical & Electronics Engineering

Description

Bulletin of Electrical Engineering and Informatics (Buletin Teknik Elektro dan Informatika) ISSN: 2089-3191, e-ISSN: 2302-9285 is open to submission from scholars and experts in the wide areas of electrical, electronics, instrumentation, control, telecommunication and computer engineering from the ...