Study on the Glass Silicon Anodic Direct Bonding Parameters

Li Jia (Inner Mongolia University of Technology)
Guo Hao (Soochow University)
Guo Zhiping (Inner Mongolia University of Technology)
Miao Shujing (Inner Mongolia University of Technology)
Wang Jingxiang (Inner Mongolia University of Technology)

Indonesian Journal of Electrical Engineering and Computer Science
Vol 1, No 1: January 2016

By MEMS packaging test platform for bonding process of bonding temperature and bonding time, and test silicon specifications experimental study. Experimental results indicate that when the bonding voltage of 1200V, bonding temperature of 4450C to 4550C, bonding time is 60s,the void fraction is less than 5%.Glass and silicon wafer bonding quality can achieve the best. The experimental results in order to improve the glass silicon bonding quality provide the basis.