0.18μm CMOS Low Voltage Power Amplifier For WSN Application

Wu Chenjian (Southeast University)
Li Zhiqun (Southeast University)
Yao Nan (Southeast University)
Zhang Meng (Southeast University)
Chen Liang (Southeast University)
Cao Jia (Southeast University)

Indonesian Journal of Electrical Engineering and Computer Science
Vol 11, No 8: August 2013

This paper presents the design of a Class A/B power amplifier (PA) for 2.4-2.4835GHz Wireless Sensor Network (WSN) system in 0.18μm CMOS technology. The PA adopts the single-stage differential structure and the output power of the PA can be controlled by switching the sizes of transistors. Seven different level of output power can be obtained through a three- bit control code. The tested results shows that the proposed PA achieves power added efficiency (PAE) of 26.73% while delivering an output power of 6.35dBm at 1dB compression point. Its power gain is 15.87dB. With a low DC voltage supply of 1V, its power consumption is 15.3mW. The PA die size is 1070×610μm2. DOI: http://dx.doi.org/10.11591/telkomnika.v11i8.3050