Modeling of Tunnel Junction (GaAs) in the Cascade Solar Cell

Dennai Benmoussa (University of Bechar)
Benslimane H (University of Bechar)
Helmaoui A (University of Bechar)
Hemmani A (University of Bechar)

Indonesian Journal of Electrical Engineering and Computer Science
Vol 12, No 7: July 2014

In this paper describes a simple model for tunnel junction (GaAs) between the top cell (GaAs) and bottom cell (Ge) of cascade solar cells. We theoretically studied the electrical characteristics (IV) of GaAs tunnel diode with the accounting program MATLAB for doping concentration of the junction after Using this model between two cascaded solar cell (GaAs / Ge) and we calculate the electrical characteristics and performance using AMPS-1D software. The conduction properties of this tunnel diode show good ohmic behavior and low contact resistance.