Terahertz Emission of Gallium Arsenide on Textured p-type Silicon (100) Substrates Grown via Molecular Beam Epitaxy

Karl Cedric P. Gonzales (National Institute of Physics, University of the Philippines)
Karim M. Omambac (National Institute of Physics, University of the Philippines)
Elizabeth Ann P. Prieto (National Institute of Physics, University of the Philippines)
Jessica Pauline C. Afalla (National Institute of Physics, University of the Philippines)
Maria Herminia M. Balgos (National Institute of Physics, University of the Philippines)
Rafael B. Jaculbia (National Institute of Physics, University of the Philippines)
Armando S. Somintac (National Institute of Physics, University of the Philippines)
Arnel A. Salvador (National Institute of Physics, University of the Philippines)
Elmer S. Estacio (National Institute of Physics, University of the Philippines)

Journal of Physics and Its Applications
Vol 1, No 1 (2018): November 2018

This study presents the terahertz (THz) emission of molecular beam epitaxy (MBE)-grown Gallium Arsenide (GaAs) on surface textured p-type Silicon (p- Si) (100) substrates. Surface texturing was achieved by anisotropic wet chemical etching using 5% wt Potassium Hydroxide (KOH): Isopropyl alcohol (IPA) (50:1) solution for 15, 30, 45, and 60 minutes. Reflectivity measurements for the textured p-Si(100) substrates indicated that the overall texturing increases with longer etching times. Raman spectroscopy of the post-growth samples confirmed GaAs growth. The THz emission intensities were the same order of magnitude. The GaAs grown on p-Si(100) textured for 60 minutes exhibited the most intense THz emission attributed to the increased absorption from a larger surface-to-volume ratio due to surface texturing. All GaAs on textured p-Si(100) samples had frequency bandwidth of ~2.5 THz.