Investigation of Structural Parameter Variation on Extended Gate TFET for Bio-Sensor Applications

Sudipta Mukherjee (Indian Institute of Technology)
Somnath Chakraborty (Indian Institute of Technology Bombay)
Deven Diwakar (Indian Institute of Technology Bombay)
Apurba Laha (Indian Institute of Technology Bombay)
Udayan Ganguly (Indian Institute of Technology Bombay)
Swaroop Ganguly (IIT Bombay)

Proceeding of the Electrical Engineering Computer Science and Informatics
Vol 7, No 1: EECSI 2020

Traditional Gate engineered Metal Oxide Semiconductor (MOS) technology faced serious challenges in terms of greater sensitivity for target biomolecules and to be utilized as the state-of-the-art Nano-recognition tool. Research on a tunnel field-effect transistor (TFET) started with the aim to achieve fast detection, low power consumption, and its potential for on-chip integration capability. Dielectric Modulated TFET (DMTFET) has established itself to be a primary candidate for sensing both charged and charge-neutral species with volumetric sensitivity. As extended gate DMTFET happens to be inferior to its short gate counterpart, we have devised ways to achieve superior performance only by making variations over structural electrostatics. With the incorporation of most possible ways of modulation, we present two orders of magnitude on-current increment and a considerable percentage of sensitivity improvement over the conventional one. Future scopes having noteworthy diversifications have also been analyzed with proper justification.