Studi Pengaruh Konsentrasi Co pada Struktur Kristal dan Respon Photoluminescence Film Tipis Ti1-xCoxO2 yang Ditumbuhkan dengan Teknik MOCVD

Horasdia Saragih (1) Laboratorium Fisika Material Elektronik, Departemen Fisika, Institut Teknologi Bandung Jl. Ganesa 10 Bandung, Indonesia 40132 Telp./Fax: [phone]) Jurusan Fisika, FMIPA Universitas Pattimura, Ambon, Indonesia)
Pepen Arifin (1) Laboratorium Fisika Material Elektronik, Departemen Fisika, Institut Teknologi Bandung Jl. Ganesa 10 Bandung, Indonesia 40132 Telp./Fax: [phone])
Mohamad Barmawi (1) Laboratorium Fisika Material Elektronik, Departemen Fisika, Institut Teknologi Bandung Jl. Ganesa 10 Bandung, Indonesia 40132 Telp./Fax: [phone])

Journal of Mathematical and Fundamental Sciences
Vol. 37 No. 2 (2005)

 Ti1-xCoxO2 thin films have been deposited on Si substrate by MOCVD technique. Thin films were synthesized by a single plane orientation structure of anatase-213 at various to Co concentartions up to 5,77%. Photoluminescence emission spectra of thin films showed a maximum peak at the energy of 2.8 eV. These energies did not change when increasing Co concentration in the Ti1-xCoxO2 thin films up to 5.77%. The patterns of spectrum emission only differ on the intensity and broadness of spectra. Broading occurs towards the higher energy of 2.8 eV, while the intensities were increased with increasing of Co concentration.