Studi Penumbuhan Film Tipis Ti1-xCoxO2 dengan Teknik MOCVD Menggunakan Prekursor Titanium (IV) Isopropoxide dan Tris (2,2,6,6-tetramethyl-3, 5-heptanedionato) Cobalt (III)

Horasdia Saragih (Laboratorium Fisika Material Elektronika, Program Studi Fisika, Institut Teknologi Bandung, Jalan Ganesa 10 Bandung, Jawa Barat 40132, Indonesia)
Edy Supriyanto (Laboratorium Fisika Material Elektronika, Program Studi Fisika, Institut Teknologi Bandung, Jalan Ganesa 10 Bandung, Jawa Barat 40132, Indonesia)
Pepen Arifin (Laboratorium Fisika Material Elektronika, Program Studi Fisika, Institut Teknologi Bandung, Jalan Ganesa 10 Bandung, Jawa Barat 40132, Indonesia)
Mohammad Barmawi (Laboratorium Fisika Material Elektronika, Program Studi Fisika, Institut Teknologi Bandung, Jalan Ganesa 10 Bandung, Jawa Barat 40132, Indonesia)

Journal of Mathematical and Fundamental Sciences
Vol. 38 No. 2 (2006)

The Ti1-xCoxO2 thin films have been grown by MOCVD technique using titanium (IV) isopropoxide (TTIP) and tris (2,2,6,6-tetramethyl-3, 5-heptanedionato) Cobalt (III) [Co(TMHD)3] powder precursors. The tetrahydrofuran (THF) were used as a solvent to get a Co(TMHD)3 solution. Characteristics of precursor and growth parameters were investigated. The Co concentration in thin films were varied. The room temperature ferromagnetic properties of Ti1-xCoxO2 thin films were obtained. Solubility of Co atom in TiO2 lattice were found at about 11%. The surface morphology of films are homogen and relatively smooth.