Electrical Characterization of II-VI Thin Films for Solar Cells Application

Farhan Ahmad (University of Punjab Lahore)
Nadir Qurban (University of Punjab Lahore)
Zain Fatima (University of Punjab Lahore)
Toqeer Ahmad (University of Punjab Lahore)
Iqra Zahid (University of Punjab Lahore)
Ahmad Ali (Superior University Lahore)
Sehrish Rana Rajpoot (Islamia University Bahawalpur)
Muhammad Wasim Tasleem (Islamia University Bahawalpur)
Esha Maqbool (University of Punjab Lahore)

Asean Journal of Science and Engineering (AJSE)
Vol 2, No 2 (2022): AJSE: September 2022

Cds and CdTe both are effective absorber semiconductors for thin-film solar cells. It is a naturally n-type material, which has a direct bandgap value of 2.42 eV at room temperature It has great importance in light detectors in this work, CdS thin films (TF) were synthesized on glass substrates by RF Magnetron sputtering technique in an inert gas atmosphere. The electrical properties of CdS were characterized by the Van Der Pauw method. The films showed p-type conductivity, while the films deposited at different annealed times exhibited n-type conductivity. The resistivity of the CdTe films decrease as the conductivity increased. As the source rate was increased, the hole concentration in the as-grown p-type CdTe films increased. It was also reported annealing process affects the electrical properties. Al doping CdS the value of resistivity becomes minimum as the resistivity becomes maximum although mobility has maximum value after an increase in Al doping the mobility value. As a result, the CdS/CdTe thin-film showed enhanced electrical properties for solar cell applications.