Indonesian Journal of Electrical Engineering and Computer Science
Vol 27, No 2: August 2022

The enhancement of the dual-layer phosphorus configuration in color uniformity and luminous flux of a light emitting diode

Phuc Dang Huu (Industrial University of Ho Chi Minh City)
Phung Ton That (Industrial University of Ho Chi Minh City)
Phan Xuan Le (Van Lang University)



Article Info

Publish Date
01 Aug 2022

Abstract

A solid-state process was used to generate the green phosphor Ca3Si2O4N2:Eu2+. The luminescence characteristics, dispersed reflection spectra, and heat quenching were investigated initially, followed by the white light emitting diodes (wLED’s) manufacture by the Eu2+ stimulated Ca3Si2O4N2 phosphor. Based on the concentration of ion Eu2+, a wide green emission range localized between 510 and 550 nm was seen in Eu2+ -doped Ca3Si2O4N2. In Ca3Si2O4N2, the best doping concentration of Eu2+ was 1 mol%. An electric multipolar interaction process conveys energy among Eu2+ ions, with a necessary conversion distance of around 30.08 Å. Blending a near-ultraviolet (n-UV) light emitting diodes (LED) which has a GaN basis (380 nm) with the blue BaMgAl10O17:Eu2+, the green  Ca3Si2O4N2:Eu2+, and the red Ca3Si2O4N2:Eu2+ phosphors yielded a wLED with a 88.25 color-rendering indice Ra at 6029 K correlating color temperature.  Ca3Si2O4N2:Eu2+ appears to be a promising option to apply as a converting phosphor in wLED applications.

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