Effect of Growth Temperature on Crystalline Structure of YBa2Cu3O7-δ Thin Films Deposited by MOCVD Method Using a Vertical Reactor with a Flow Guide

Eko H. Sujiono (1) Laboratory of Electronic Material Physics (LEMP), Department of Physic Institut Teknologi Bandung, Jl. Ganesa 10 Bandung, Indonesia 40132. 2) Department of Physics, Universitas Negeri Makassar (UNM), Kampus FMIPA UNM, Parangtambung, Makassar 90224)
T. Saragi (Laboratory of Electronic Material Physics (LEMP), Department of Physics, Institut Teknologi Bandung, Jl. Ganesa 10 Bandung, Indonesia 40132)
P. Arifin (Laboratory of Electronic Material Physics (LEMP), Department of Physics, Institut Teknologi Bandung, Jl. Ganesa 10 Bandung, Indonesia 40132)
M. Barmawi (Laboratory of Electronic Material Physics (LEMP), Department of Physics, Institut Teknologi Bandung, Jl. Ganesa 10 Bandung, Indonesia 40132)

Indonesian Journal of Physics (IJP)
Vol 12 No 2 (2001): Vol. 12 No. 2, April 2001

Effect of growth temperature on crystalline structure of YBCO thin films have been studied by a MOCVD method using a vertical reactor with a flow guide. At growth temperature between 600°C and 675°C, the films are composed of a mixture of a-axis and c-axis oriented phases, while at growth temperature of 700°C or higher, the a-axis-oriented phase disappears. At these growth temperatures, only c-axis-oriented phases are existing on the films. Film grown at 680°C or higher have the composition of Y : Ba : Cu is 1 : 2 : 3, as confirmed from EDAX spectra. Films deposited at 700°C have critical temperature around 87.4 K.