Studi Sifat Listrik pada Film GaN Doping Mg yang Ditumbuhkan dengan Metode Metalorganic Chemical Vapor Deposition (MOCVD) Berbantuan Plasma

A. Subagio (Jurusan Fisika, Universitas Diponegoro, Semarang)
Erzam S.H. (Jurusan Fisika, Universitas Haluoleo, Kendari)
Sugianto Sugianto (Jurusan Fisika, Universitas Negeri Semarang, Semarang)
M. Budiman (Laboratorium Fisika Material Elektronika, Departemen Fisika, ITB, Bandung)
M. Barmawi (Laboratorium Fisika Material Elektronika, Departemen Fisika, ITB, Bandung)

Indonesian Journal of Physics (IJP)
Vol 13 No 4 (2002): Vol. 13 No.4, October 2002

Mg-doped GaN films have been grown on (0001) sapphire substrates by employing plasma-assisted Metalorganic Chemical Vapor Deposition (MOCVD) method. Trimethylgallium (TMGa) and N2 were used as Ga and N precursors, respectively and bis-cyclopentadienyl magnesium (Cp2Mg) as a p-type doping source. The process of growing thin film was started by deposition the buffer layer on 0.08 sccm TMGa and 140 sccm N2 flow rates. Under this condition a 260 Å thick buffer layer was achieved. The ratio of Cp2Mg and TMGa flow rate was varied 0.3; 1; 2; 5; 7 and 10 %. Hall measurements the show that type of GaN film in 0.3% was n-type, in 1% the type was not clear, while in 2, 5, 7 and 10% GaN films were absolutely of p-type. The 10% Mg-doped GaN film had the highest hole mobility of 55.71 cm2/Vs. It also had the hole concentration of 1.14x1019 cm-3 and resistivity of 9.87x10-3ohm.cm.