Indonesian Journal of Physics (IJP)
Vol 14 No 3 (2003): Vol. 14 No.2, Juli 2003

Modeling of Temperature Dependence of Current in Metal-Oxide-SemiconductorCapacitors after Quasi Breakdown

Fatimah A. Noor (Department of Physics, Bandung Institute of Technology, Jalan Ganesa 10, Bandung 40132, Indonesia)
Khairurrijal Khairurrijal (Department of Physics, Bandung Institute of Technology, Jalan Ganesa 10, Bandung 40132, Indonesia)

Article Info

Publish Date
03 Nov 2016

Abstract

A simple model of temperature dependence of current in MOS capacitors after quasi breakdown was obtained. In developing the simple model, it was assumed that electron traps are created in the oxide layer during high electric field injection of electrons. Further assumptions were that transport of electrons from one trap to another occurs due to an activated process of motion and the traps have an exponential distribution in energy. The results calculated using the model fit well the measured data.

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Journal Info
Indonesian Journal of Physics (IJP)
Website

Abbrev

ijp

Publisher

Institut Teknologi Bandung

Subject

Astronomy Computer Science & IT Earth & Planetary Sciences Electrical & Electronics Engineering Energy Engineering

Description

Indonesian Journal of Physics welcomes full research articles in the area of Sciences and Engineering from the following subject areas: Physics, Mathematics, Astronomy, Mechanical Engineering, Civil and Structural Engineering, Chemical Engineering, Electrical Engineering, Geotechnical Engineering, ...