Dependence of Ga1-xMnxN Thin Films Growth on Substrate Temperature in Vertical MOCVD Reactor by Numerical Simulation

Budi Mulyanti (1) Laboratory of Electronic Material Physics, Department of Physics, Bandung Institute of Technology (ITB). 2) Department of Electrical Engineering Education, Universitas Pendidikan Indonesia (UPI))
Fitri S. Arsyad (1) Laboratory of Electronic Material Physics, Department of Physics, Bandung Institute of Technology (ITB). 2) Department of Physics, University of Sriwijaya (Unsri))
P. Arifin (Laboratory of Electronic Material Physics, Department of Physics, Bandung Institute of Technology (ITB), Jl. Ganesa 10 Bandung, Indonesia)
M. Budiman (Laboratory of Electronic Material Physics, Department of Physics, Bandung Institute of Technology (ITB), Jl. Ganesa 10 Bandung, Indonesia)
Sri Jatno W (Laboratory of Electronic Material Physics, Department of Physics, Bandung Institute of Technology (ITB), Jl. Ganesa 10 Bandung, Indonesia)
M. Barmawi (Laboratory of Electronic Material Physics, Department of Physics, Bandung Institute of Technology (ITB), Jl. Ganesa 10 Bandung, Indonesia)

Indonesian Journal of Physics (IJP)
Vol 15 No 3 (2004): Vol. 15 No. 3, July 2004

Growth of Ga1-xMnxN thin film in the vertical MOCVD (Metal Organic Chemical Vapor Depositions) reactor as a function of substrate temperature is analyzed by numerical simulation. Gases that are used as a source of Ga, N and Mn are trimethylgallium (TMGa), nitrogen (N2) and cyclopentadienyl manganese tricarbonyl (CpMnTc), respectively. Hydrogen (H2) is used as a carrier gas for both TMGa and CpMnTc. The objective of simulation is to obtain an optimal growth parameter, in which the growth rate is high and uniform. From the simulation results, it can be concluded that to achieve a highest growth rate, the substrate temperature should be maintained at about 1173 K and with this temperature the growth rate is nearly constant when the susceptor radial distance is between 3.5 cm and 4.5 cm.