Simulation of Surface Potential Distribution Induced by Electronic Carrier Injection into Single Silicon Quantum Dot

Yudi Darma (Quantum Semiconductor and Device Lab., Department of Physics, Institut Teknologi Bandung)
Rizal Kurniadi (Computational Physics, Department of Physics, Institut Teknologi Bandung Jl. Ganesha 10 Bandung 40132)
M. Hamzah Fauzi (Quantum Semiconductor and Device Lab., Department of Physics, Institut Teknologi Bandung)
Yuli Cha Tarido (Quantum Semiconductor and Device Lab., Department of Physics, Institut Teknologi Bandung)

Indonesian Journal of Physics (IJP)
Vol 17 No 4 (2006): Vol. 17 No. 4, October 2006

In this paper we propose a numerical simulation method of the surface potential distribution based on the solution of two-dimensional Poisson equation in rectangular coordinates with boundary condition. The simulation results confirm that the surface potential changes on the dot by electron injection and/or extraction, in contrast to the neutral dot in which just a flat potential image was observed. . In this work we investigated the charge states of individual quantum dot with the diameter of 10 and 20nm. Note that, if two or more electrons are injected/extracted to/from the quantum dot, the coulombic repulsion effect is observed, and more clearly for the dot with the bigger size due to the charges separation into the quantum dot.