PREPARATION AND PHOTOLUMINESCENCE PROPERTIES OF RF-SPUTTERED ZnO FILMS

N. T. T. Lieu (Posts and Telecommunications Institute of Technology, Vietnam Posts and Telecommunications Group)
T. D. Canh (Hanoi University of Natural Science)
N. X. Nghia (Academy of Science and Technology)
Kontan Tarigan (Hankuk University of Foreign Studies)

International Journal of Innovation in Mechanical Engineering and Advanced Materials
Vol 1, No 1 (2015)

ZnO/Si films were prepared by radio frequency (RF) magnetron sputtering at room temperature. By optimizing the heat treatment conditions, we obtained a good quality film annealed at 700 ºC for longer 60 minutes. This process was monitored carefully by Raman scattering spectroscopy, and X-ray diffraction. The photoluminescence study on this film revealed that only ultraviolet emissions due to donor-acceptor pair (DAP), neutral acceptor-bound exciton (AºX) and donor-bound exciton (DºX) were observed. The intensity and peak position of these emissions depend on the measurement temperature and excitation power density.