STUDI PENGARUH SUHU SUBSTRAT TERHADAP SIFAT LISTRIK DAN OPTIK BAHAN SEMIKONDUKTOR LAPISAN TIPIS SnSe HASIL PREPARASI TEKNIK VAKUM EVAPORASI STUDY OF THE EFFECT OF SUBSTRATE TEMPERATURE ON THE OPTICAL AND ELECTRICAL PROPERTIES OF SnS THIN FILMS SEMICONDUCTORPREPARED USING VACUUM EVAPORATION TECHNIQUE.

Rully Fakhry Muhammad
Tjipto Sujitno

Jurnal Ilmu Fisika dan Terapannya (JIFTA)
Vol 5, No 5 (2016): Jurnal Fisika

AbstrakPenelitian ini bertujuan untuk mengetahui pengaruh variasi suhu substrat terhadap sifat optik dan listrik lapisan tipis Tin Sulfide (SnS) hasil preparasi menggunakan teknik vakum evaporasi. Sampel berupa lapisan tipis SnS hasil preparasi menggunakan metode vakum evaporasi pada tekanan 2 x 10−5 mbar, berat bahan 0,250gram, spacer 15 cm. dan pada berbagai variasi suhu substrat yaitu pada tanpa suhu substrat, 250 oC, 350 oC, 500 oC dan 550 oC. Karakterisasi sifat listrik dilakukan menggunakan probe empat titik (FPP, four point probe) sedang sifat optik lapisan tipis dikarakterisasi menggunakan spectroscopy UV-Vis. Hasil karakterisasi FFP menunjukkan bahwa lapisan tipis SnS merupakan semikonduktor tipe P dengan resistivitas sebesar 0,466x103Ω-cm, resistansi sebesar 1,837x105Ω untuk suhu 500 ○C dan resistivitas sebesar 0,360x103Ω-cm, resistansi sebesar 1,421x105Ω untuk suhu 550 ○C. Dari data pengukuran sifat optik menggunakan UV-Vis, untuk substrat tanpa pemanasan substrat, 250°C, 350°C, 500°C dan 550°C diperoleh energi gap 1,65 eV, 1,63 eV, 1,65 eV, 1,65 eV dan 1,66 eVKata kunci: Lapisan tipis semikonduktor Sns, metode evaporasi, energy gapAbstractThe aim of this research is to investigate the influence of substrate temperature on the optical and electrical properties of tin sulfide (SnS) thin film prepared using vacuum evaporation technique.The sample was thin film of SnS which is produced by vacuum evaporation process at 2 x 10−5 mbar of pressure, the material weight was 0,250 gram, the used spacer was 15 cm, and for various of substrate temperature such as unheated substrate, 250 oC, 350 oC, 500 oC and 550 oC. Characterization of electrical properties were measured by four point probe (FPP), while optical properties were measured by using spectroscopy UV-Vis. The result of FPP characterization showed that SnS tin film was included to P-Type of semiconductor with 0,466 x 103Ω-cm of resitivity, 1,837 x 105Ω of resistance for 500 oC and resistivity was 0,360 x 103Ω-cm, resistance was 1,421 x 105Ω. From the data of optical properties measurement using Uv-Vis, substrate unheating, 250°C, 350°C, 500°C and 550°C has 1,65 eV, 1,63 eV, 1,65 eV, 1,65 eV and 1,66 eV of gap energyKeywords: SnS thin film semiconductor, evaporation methods, and gap energy.