Structure and Photo-response Properties of FZO/ITO Thin Film

Amrina Mustaqim - (Department of Engineering Physics, Institut Teknologi Sumatera, Indonesia)
Yeli Krisdayanti Lature (Department of Physics, Institut Teknologi Sumatera, Indonesia)
Mohamad Samsul Anrokhi (Department of Physics, Institut Teknologi Sumatera, Indonesia)
Koko Friansa (Department of Energy System Engineering, Institut Teknologi Sumatera, Indonesia)
Retno Maharsi (Department of Biomedical Engineering, Institut Teknologi Sumatera, Indonesia)
Eka Nurfani (Department of Materials Engineering, Institut Teknologi Sumatera, Indonesia)

Newton-Maxwell Journal of Physics
Vol. 5 No. 1: April 2024

The structure and photo-response properties of ZnO:Fe/ITO thin film synthesized using  a pyrolysis method were studied in this work. ZnO:Fe/ITO thin film referred to as FZO/ITO was characterized using the X-ray diffraction (XRD) technique and current-voltage (I-V) measurements. The XRD analysis showed that the detected peaks at 30.23°, 35.15°, 37.36°, 45.18°, and 50.54° belonged to the ITO cubic phase. The I-V analyses showed that the sample had the saturation current, Schottky barrier, and sensitivity of 16.24 µA, 0.4771, and 0,90 µA respectively. The FZO/ITO gave a good response toward the light.