<![CDATA[Schottky diodes have been fabricated using 4H-SiC semiconductor with Ni and Ti metals functioning as Schottky and Ohmic contacts, respectively. The metal contacts were fabricated through DC sputtering process and followed by annealing treatment at 500°C for 30 minutes for one of the samples. Annealing treatment at this condition for Ni/4H-SiC/Ti Schottky diode has improved the quality of the diode. The improvement was marked by the decrease in saturation current from 3.27×10-9 A/cm2 to 2.78×10-9 A/cm2. Another parameter that is improving was its series resistance that decreased from 44.88 kΩ to 13.86 kΩ based on calculation using function F1 and 38.87 kΩ into 12.79 kΩ based on calculation using function F2. The difference in values between calculation using function F1 and F2 is only about 13%. Schottky Barrier Height and diode ideality factor also improved. The value of Schottky Barrier Height and diode ideality factor that have been calculated using I-V curve and Cheung’s method only vary slightly at about 13%. Hence it can be concluded that both calculation methods have produced consistent results across the data range and annealing process at 500°C for 30 minutes has been proven enhancing the diode quality.]]>
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