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Jurnal Elektronika dan Telekomunikasi
Published by Lembaga Ilmu Pengetahuan Indonesia
ISSN : 14118289     EISSN : 25279955     DOI : -
Core Subject : Engineering,
Electrical & Electronics Engineering Engineering
Jurnal Elektronika dan Telekomunikasi (JET) is an open access, a peer-reviewed journal published by Research Center for Electronics and Telecommunication - Indonesian Institute of Sciences. We publish original research papers, review articles and case studies on the latest research and developments in the field of electronics, telecommunications, and microelectronics engineering. JET is published twice a year and uses double-blind peer review. It was first published in 2001.
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Articles 11 Documents
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Search results for , issue "Vol 20, No 2 (2020)" : 11 Documents clear
Thermopower Enhancement of Rutile-type SnO2 Nanocrystalline Using Facile Co-Precipitation Method Nadya Larasati Kartika; Budi Adiperdana; Asep Ridwan Nugraha; Ardita Septiani; Dadang Mulyadi; Asep Rusmana; Pepen Sumpena; Dedi Dedi
Jurnal Elektronika dan Telekomunikasi Vol 20, No 2 (2020)
Publisher : LIPI Press

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.14203/jet.v20.82-88

Abstract

Metal oxide semiconductor has attracted so much attention due to its high carrier mobility. Herein, thermoelectric study of nanocrystalline SnO2 through a simple co-precipitation method is conducted to enhance the Seebeck coefficient (S). X-ray diffraction, thermogravimetric analysis (TGA), resistivity (r), Seebeck coefficient (S), and power factor (PF) measurements are conducted to analyze the thermoelectric properties of the material. The measurements show that there are two interesting results, which are the unusual resistivity behavior and the high value of the S. Resistivity behavior shows a non-reflective intermediate semiconductor-metals behavior where the turning point occurs at 250 o C. This behavior is strongly correlated to the surface oxide reaction due to annealing temperature. The maximum S likely occurs at 250 ºC, since the curve shows a slight thermopower peak at 250 ºC. The value of the S is quite high with around twenty times higher than other publications about SnO2 thermoelectric material, this happens due to the bandgap broadening. The energy gap of SnO2 calculated using density functional theory (DFT), which was performed by Quantum Espresso 6.6. The result shows that there is a broadening energy gap at different momentum or wave factor. Nanocrystalline semiconductors material is giving an impact to increase the width of bandgap due to quantum confinement and could enhance the thermopower especially in SnO2 nanocrystalline

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