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Artoto Arkundato
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Jurusan Fisika, FMIPA, Universitas Jember Jalan Kalimantan No.37, Krajan Timur, Jember Lor, Kecamatan Sumbersari, Kabupaten Jember, Jawa Timur 68121
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Computational and Experimental Research in Materials and Renewable Energy (CERiMRE)
Published by Universitas Jember
ISSN : -     EISSN : 2747173X     DOI : https://doi.org/10.19184/cerimre.v3i2.23544
Core Subject : Science,
Computer Science & IT Energy Materials Science & Nanotechnology Physics
Computational and Experimental Research in Materials and Renewable Energy (CERiMRE) journal receives scientific articles of experimental and/or computational research that using many tools and methods as computational methods (Micromagnetic simulation, DFT Density Functional Theory, MD molecular dynamics, CFD computational fluid dynamics, MC Monte Carlo, FEM finite element method, transport neutron equation, etc) and standard experimental tools and analysis (FTIR, XRD, EDAX, bending test, etc) to develop potential applications of new materials and renewable energy sources. The materials and renewable energy under investigation may show: Prediction of material properties for new potential applications as electronics materials, photonics materials, magnetic materials, spintronics materials, optoelectronics materials, nuclear materials, thermoelectric materials, etc. Exploration of new design of renewable energy resources as in nuclear power plants, solar cell, fuel cells, biomass, thermoelectric generators, nuclear batteries, wind, wave, geothermal, etc.
Arjuna Subject : Fisika dan Astronomi - Fisika dan Astronomi (Lain-Lain)
Articles 5 Documents
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Search results for , issue "Vol 2 No 1 (2019): May" : 5 Documents clear
Effect of Write Head Movement On Magnetic Spin Domain Reversal of Nanocube Co/Pd Alloy Material Using Micromagnetic Simulation Baskoro, Ilham Heru; Lestari, Merinda
Computational And Experimental Research In Materials And Renewable Energy Vol 2 No 1 (2019): May
Publisher : Physics Department, Faculty of Mathematics and Natural Sciences, University of Jember

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.19184/cerimre.v2i1.20556

Abstract

An analysis of the effect of the write head movement on the reversal time of the domain spin with magnetic Co/Pd on the magnetic recording layer has been carried out through micromagnetic simulation. The magnetic recording layer is modeled in the form of cubes (nanocubes) which consists of 5 domain spin. The write head, which is a transduser, moves along the domain spin to write data in the form of magnetic spins, which represent the bits on the magnetic recorder perpendicular. The results of this simulation are a profile of changes in the total magnetic field and reversal time of the domain spin when writing magnetic data for 6 nanoseconds. The calculation used in this study is an analytical calculation regarding the reversal time of the magnetic domain spin of the Co/Pd alloy material. The formulation for calculating the reversal time of domain-spin magnetization is a combination of graphical analysis and analytical calculations with visualization of the magnetic spin configuration that consisting of 5 domains spin. This simulation was carried out using the finite element method and obtained a saturation 5 field value of the magnetic alloy Co/Pd (Hs) material of 2.5 x 105 A/m and a write head (Hwh) field that 6 must be applied to the magnetic recording layer in order to reverse the uniform domain spin is 7.3 x 106 A/m. Each size of the domain spin requires a different write head, the smaller the nanocube size, the greater the write head field applied to the magnetic recording layer. Meanwhile, the effective write head 6 field amplitude that is suitable for the 20 nm domain spin is 8.3 x 106 A/m. A significant change in the total field occurs when the domain spin reverses 3 times in the first domain spin (n1), the third domain spin (n3) and the fifth domain spin (n5). The total field value when t=0.42 ns ( first domain spin reversal) is 73.69376 A/m, then the total field at t=0.42 ns (third domain spin reversal) is 3443.197 A/m and the current total field t=0.42 ns (fifth domain spin reversal) of 5480.696 A/m.
Study of Phenomenon STT (Spin Transfer Torque) on Permalloy NiFe Material Shaped Nanowire Using Micromagnetic Simulation Ni’mah, Khiptiatun; Rohman, Lutfi; Purwandari, Endhah
Computational And Experimental Research In Materials And Renewable Energy Vol 2 No 1 (2019): May
Publisher : Physics Department, Faculty of Mathematics and Natural Sciences, University of Jember

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.19184/cerimre.v2i1.20555

Abstract

STT is a process of controlling the spin currents in spintronic. This simulation aims to know the properties of NiFe permalloy materials' properties by studying STT phenomenon-shaped nanowire that can be applied in storage devices, like MRAM. The material's magnetic properties include magnetization value, energy in the ferromagnetic system, and the speed of the domain wall movement, obtained by injecting the electric current density through a micromagnetic simulation using the NMAG program. This simulation's result is that the domain wall's position will shift faster along the nanowire when we inject current density to the nanowire. Current density injection will produce a domain wall pressure on the domain structure, resulting in a change in the material's magnetization value. The graph of magnetization relation to time (M-t), shown along with the increasing electric current density, we obtain oscillation magnetization change will increase. The larger the given diameter, the total energy generated will increase, demagnetization energy tends to be greater than the energy exchange. The greater the polarization of the material provided at the same diameter, the speed of the domain wall movement will be greater too.
Modeling of Ferrous Metal Diffusion in Liquid Lead Using Molecular Dynamics Simulation Nuris, Ahmad Anwar
Computational And Experimental Research In Materials And Renewable Energy Vol 2 No 1 (2019): May
Publisher : Physics Department, Faculty of Mathematics and Natural Sciences, University of Jember

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.19184/cerimre.v2i1.20561

Abstract

Modeling of Iron metal diffusion in liquid lead using molecular dynamics simulation has been done. Molecular dynamics simulations are used to predict the value of physical quantities that we want to know based on the designed material model and on the input simulation data. In this research, effect of different geometry of material models was observed to know the diffusion coefficient. The material system was iron (Fe) in liquid lead (Pb). The material models is designed using Packmol software to get the initial configuration of atom's arrangement by inputting the material's characteristics such as mass, density, volume, number of atoms. This work examines the diffusion coefficient of iron in molten lead metal with the geometric shape of the simulation system in the form of iron in molten metal for various simulation models of boxes in a box, balls in a box and balls in balls. To design simulated geometric shapes we use the Packmol program. To calculate the diffusion coefficient we use the molecular dynamics simulation method. To find out which geometry is suitable, we compare the diffusion coefficient of the simulation results with existing references. The diffusion coefficient value of the spherical iron (Fe) system in the spherical liquid lead (Pb) has the best value compared to the other two forms with an accuracy rate of 99.94% because it is influenced by the even distribution of atoms in each part.
Effect of Temperature on The Electron Concentration of Crystalline GaAs Semiconductor Based on The p-n Junction Due to Deformation Potential Scattering Alviati, Nova; Hoiriyah, Samsiatun; Misto, Misto; Supriyanto, Edy
Computational And Experimental Research In Materials And Renewable Energy Vol 2 No 1 (2019): May
Publisher : Physics Department, Faculty of Mathematics and Natural Sciences, University of Jember

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.19184/cerimre.v2i1.20560

Abstract

The electrical characteristics of semiconductor materials can be predicted based on the transport of charge carriers within the material. Under room temperature, the electrical properties of semiconductor materials can be exploited by knowing the value of their electron mobility to predict the number of electrons that experience the transport mechanism. When the material is observed under room temperature, the interaction of electrons and the lattice atoms' vibrations result in deformation potential scattering. This can stimulate electron mobility changes, which can affect the number of free electrons in semiconductor materials. The research results presented in this paper simulate the number of electrons that change due to electrons' mobility in the GaAs crystal. This material undergoes potential scattering deformation due to the interaction between electrons and phonons at temperature (40-100) K. The simulation is carried out by modeling the GaAs semiconductor material in the form of a p-n junction. The temperature variation given to the material shows a significant change in concentration in the junction area. In contrast, in the contact area's vicinity with the external circuit, both the p-layer and the n-layer show relatively constant electron concentrations.
Young’s Modulus Calculation of Some Metals Using Molecular Dynamics Method Based on the Morse Potential Zahroh, Fitriana Faizatu; Sugihartono, Iwan; Safitri, Ernik D.
Computational And Experimental Research In Materials And Renewable Energy Vol 2 No 1 (2019): May
Publisher : Physics Department, Faculty of Mathematics and Natural Sciences, University of Jember

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.19184/cerimre.v2i1.20557

Abstract

It has been investigated computationally Young's modulus of some metals: nickel, copper, silver, gold, and aluminum. The offset method can graphically determine Young's modulus property by determining the elastic region based on the straight line intersection formed at a 0.2% strain against the stress-strain curve. In this simulation work, Young’s modulus calculation was performed by using the LAMMPS molecular dynamics software. The interatomic potential used to represent the interactions among atoms of materials in this simulation is the Morse potential. The metals under-investigated in this work are nickel, copper, silver, gold, and aluminum, and we got the results are 209.2 GPa, 110.8 GPa, 83.8 GPa, 79.2 GPa, and 70.3 GPa, respectively. The Young's modulus of the materials was also computed as temperature variations from 300K to the melting point to determine the effect of temperature on Young's modulus, and it is tensile strength. From our work we can found that the higher the temperature, the lower Young's modulus value. In addition, it can be seen that nickel metal has good temperature resistance. This is evidenced by the change in the nickel-metal phase near its melting point.

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