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Bulletin of Electrical Engineering and Informatics

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Published by Universitas Ahmad Dahlan

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Core Subject : Engineering,

Electrical & Electronics Engineering

Bulletin of Electrical Engineering and Informatics (Buletin Teknik Elektro dan Informatika) ISSN: 2089-3191, e-ISSN: 2302-9285 is open to submission from scholars and experts in the wide areas of electrical, electronics, instrumentation, control, telecommunication and computer engineering from the global world. The journal publishes original papers in the field of electrical, computer and informatics engineering.

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Articles 15 Documents

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Search results for , issue "Vol 5, No 1: March 2016" : 15 Documents clear

Bright Lesion Detection in Color Fundus Images Based on Texture Features Ratna Bhargavi V; Ranjan K. Senapati
Bulletin of Electrical Engineering and Informatics Vol 5, No 1: March 2016
Publisher : Institute of Advanced Engineering and Science

In this paper a computer aided screening system for the detection of bright lesions or exudates using color fundus images is proposed. The proposed screening system is used to identify the suspicious regions for bright lesions. A texture feature extraction method is also demonstrated to describe the characteristics of region of interest. In final stage the normal and abnormal images are classified using Support vector machine classifier. Our proposed system obtained the effective detection performance compared to some of the state–of–art methods.

Regime Analysis of Critical Raindrop Diameters for Rainfall Attenuation in Southern Africa O Adetan; OO Obiyemi
Bulletin of Electrical Engineering and Informatics Vol 5, No 1: March 2016
Publisher : Institute of Advanced Engineering and Science

The influence of critical raindrop diameters on the specific rainfall attenuation in Durban (29o52'S, 30o58'E), South Africa using various rainfall regimes is analyzed in this paper. Different rain rate values representing drizzle, widespread, shower and thunderstorm are selected for the purpose of analysis over the measured raindrop size distribution. The three-parameter lognormal and gamma DSD models with shape parameter of 2 are used to estimate the parameters required to investigate the drop sizes which produce a major contribution to the total specific rainfall attenuation for the selected rain rate values. The computed total specific attenuation increases with increasing frequencies and rain rates. The highest and prevailing contribution to the specific attenuation occurs at for the stratiform (drizzle or widespread) and convective (shower or thunderstorm) rain types for the models considered. The total percentage fraction formed by drops in the diameter range 0.5 mm ≤ D ≤ 2.5 mm and 1.0 mm ≤ D ≤ 3.0 mm are found to be most critical for the specific rain attenuation for the stratiform (drizzle and widespread) and convective (shower and thunderstorm) rainfall types especially at higher frequencies.

Comparative Analysis of DITC Based Switched Reluctance Motor Using Asymmetric Converter and Four-Level Converter P. Srinivas; K. Amulya
Bulletin of Electrical Engineering and Informatics Vol 5, No 1: March 2016
Publisher : Institute of Advanced Engineering and Science

High torque ripple is the main draw of Switched Reluctance Motor (SRM) compared to other conventional motor. Torque ripples can be minimized by Direct Instantaneous Torque Control (DITC) technique. DITC responds against the torque error instantaneously by using hysteresis torque controller and regulate the torque output of the motor within hysteresis band.This paper compares the performance of Switched Reluctance Motor in terms of torque ripples with DITC strategy for both Asymmetric converter and Four-level converter. Asymmetric converter has three states namely magnetization, freewheeling and demagnetiztion states. With four-level converter, fast magnetization and fast demagnetization are also possible. Thus, the current build up and decay time is reduced which improves the dynamic performance. SRM is simulated using DITC scheme with Asymmetric converter and Four-level converter in MATLAB/SIMULINK to analyze torque ripples and it is observed that DITC with four level converter is better than that with Assymetrical converter.

Substrate Current Evaluation for Lightly and Heavily Doped MOSFETs at 45 nm process Using Physical Models Sanjay Sharma; R. P. Yadav; Vijay Janyani
Bulletin of Electrical Engineering and Informatics Vol 5, No 1: March 2016
Publisher : Institute of Advanced Engineering and Science

Substrate noise is a major integration issue in mixed signal circuits; particularly at radio frequency (RF) it becomes a key issue. In deep sub micron MOSFETs hot carrier effect induces device degradation. The impact ionization phenomenon is one of the main hot carrier effects. The paper covers the process and device level simulation of MOSFETs by TCAD and the substrate current comparison in lightly and heavily doped MOS. PMOS and NMOS devices are virtually fabricated with the help of ATHENA process simulator. The modeled devices include the hot carrier effects. The MOS devices are implemented on lightly and heavily doped substrates and substrate current is evaluated and compared with the help of ATLAS device simulator. Substrate current is better in lightly doped substrate than in heavily doped one. Drain current is also better in lightly doped than heavily doped substrates. Silvaco TCAD Tool is used for Virtual fabrication and simulation. ATHENA process simulator is used for virtual fabrication and ATLAS device simulator is used for device characterization.

Leakage Immune 9T-SRAM Cell in Sub-threshold Region Priya Gupta; Anu Gupta; Abhijit Asati
Bulletin of Electrical Engineering and Informatics Vol 5, No 1: March 2016
Publisher : Institute of Advanced Engineering and Science

The paper presents a variability-aware modified 9T SRAM cell. In comparison to 6T SRAM cell the proposed cell achieves 1.3× higher read-SNM and 1.77× higher write-SNM with 79.6% SINM (static current noise margin) distribution at the expense of 14.7× lower WTI (write trip current) at 0.4 V power supply voltage, while maintaining similar stability in hold mode. Thus, comparative analysis exhibits that the proposed design has a significant improvement, thereby achieving high cell stability at 45nm technology.

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