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M. Idrish Miah
University of Chittagong
Astronomy Energy Materials Science & Nanotechnology Physics

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Kinetics of optical phonons and DP depolarization of spins in drift transport: Hot carrier spin effect in semiconductors M. Idrish Miah
INDONESIAN JOURNAL OF APPLIED PHYSICS Vol 14, No 2 (2024): October
Publisher : Department of Physics, Sebelas Maret University

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.13057/ijap.v14i2.86965

Abstract

Spin-conserving transport of carriers is an essential requirement for the practical semiconductor-based spintronic devices. Kinetics of optical phonons and Dyakonov-Perel (DP) depolarization of spins in drift transport in semiconductor gallium arsenide (GaAs) is theoretically investigated. We consider electrons in n-type bulk GaAs subjected to a strong electric field, where the electron distribution is assumed to be drifted Maxwellian. The momentum drift of this distribution results in the enhanced drift velocity, and electrons with the corresponding energy emit optical hot phonons in the drifting process. The hot phonons are incorporated via the longitudinal polar optical phonon (POP) mechanism in the momentum relaxation. It is found that a finite phonon lifetime can reduce the momentum relaxation rate, which results in a delay in the runaway to higher fields, where the effect increases with the electron density. The electron spin is found to relax with the DP relaxation frequencies, and the DP spin lifetimes are found to decrease with increasing the drift field. However, a high field completely depolarizes the electron spin due to an increase of the DP spin precession frequency of the hot electrons in the POP scattering process. It is also found that the DP spin precession frequency decreases with decreasing electron temperature or increasing electron density in the moderate range. However, the findings resulting from this investigation demonstrate the hot carrier effect in the spin transport in semiconductors. The results are discussed in comparison with those obtained in earlier experimental and theoretical studies with different approaches.
Theoretical studies of optically induced high spin polarization and cubic anisotropy in cubic semiconductors M. Idrish Miah
INDONESIAN JOURNAL OF APPLIED PHYSICS Vol 15, No 1 (2025): April
Publisher : Department of Physics, Sebelas Maret University

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.13057/ijap.v15i1.97373

Abstract

Theoretical studies of optical spin polarization and cubic anisotropy in cubic semiconductors GaAs and GaSb are performed. We use Kane wave functions to calculate the eight-level transition matrix elements permitted by the optical selection rules. It is found that the spin polarization depends on semiconductor, the pumping direction as well as the photon energy. A high spin polarization of about 55% is obtained for GaSb. The anisotropic effect in these cubic crystals is clearly seen. The band edge polarization is found to be flatter and higher for GaAs than that for GaSb. The results are discussed in comparison with the experimental data available in the literature.
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