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All Journal International Journal of Applied Power Engineering (IJAPE)
Ho Minh Trung
Vinh Long University of Technology Education
Electrical & Electronics Engineering

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Surface passivation-induced enhancement of light absorption in photoanodes for quantum dot-based solar cells Ho Minh Trung; Le Xuan Thuy
International Journal of Applied Power Engineering (IJAPE) Vol 15, No 2: June 2026
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijape.v15.i2.pp948-954

Abstract

Quantum dot-sensitized solar cells hold promise for low-cost, high-efficiency photovoltaic applications; however, instability due to quantum dot degradation and poor interfacial charge transport remain key challenges. In this study, a copper-doped Zn(S,Se) passivation layer was chemically synthesized and applied onto TiO₂/CdS/CdSe@Cu photoanodes. The goal was to shield quantum dots from corrosive polysulfide electrolytes and enhance photon absorption. The morphology, structure, and optical characteristics of the Zn(S,Se):Cu layers were systematically analyzed using field-emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), and UV-Vis spectroscopy. J-V measurements demonstrated that the ZnSe:Cu-coated photoelectrode achieved a higher power conversion efficiency (5.31%) than the ZnS:Cu counterpart (4.5%). Moreover, electrochemical impedance spectroscopy revealed a lower charge transfer resistance (Rct2 = 331 Ω), indicating improved electron transport and reduced recombination. These findings highlight the potential of Zn(S,Se):Cu layers in enhancing the stability and efficiency of quantum dot-sensitized solar cells, paving the way for more durable and efficient solar energy devices.
Analysis of charge transport kinetics in photovoltaic based on FTO@TiO2@CdS:Cu²⁺@ZnS photoanode Thai Van Thanh; Nguyen Van Minh; Ho Minh Trung
International Journal of Applied Power Engineering (IJAPE) Vol 15, No 3: September 2026
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijape.v15.i3.pp1064-1071

Abstract

This study examines charge-transport kinetics in TiO₂@CdS:Cu²⁺@ZnS quantum dot-sensitized solar cells, addressing a key research gap regarding how controlled Cu²⁺ incorporation simultaneously affects recombination dynamics and interfacial charge-transfer resistances. While previous works mainly emphasized optical improvements from Cu doping, the coupled effects on impedance characteristics and device performance remain insufficiently clarified. Cu-doped CdS quantum dots with concentrations ranging from 0 to 0.5 mol were synthesized via the SILAR method and protected with a ZnS passivation layer. Electrochemical impedance spectroscopy and I-V characterization were employed to quantify changes in Rct1, Rct2, Jsc, Voc, fill factor, and power conversion efficiency. The optimal Cu(0.2) device achieved 4.69% efficiency with a Jsc of 27.4 mA/cm², reflecting enhanced charge transport, reduced recombination, and improved light absorption. The findings reveal the previously underexplored dual role of Cu doping in tuning both optical and electronic properties. Furthermore, they identify the threshold at which excessive Cu leads to recombination-dominated losses and structural degradation. This work establishes a clearer mechanistic basis for engineering high-performance quantum absorber architectures in next-generation solar cell technologies.
Co-Authors Le Xuan Thuy Nguyen Van Minh Thai Van Thanh