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Abdullah Z. Nuri
Tikrit University, Iraq
Aerospace Engineering Automotive Engineering Chemical Engineering, Chemistry & Bioengineering Civil Engineering, Building, Construction & Architecture Electrical & Electronics Engineering

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ANALYTICAL AND SIMULATED STUDY OF A BIPOLAR TRANSISTOR'S INPUT CHARACTERISTICS USING NI MULTISIM 14.2 PROGRAM Abdullah Z. Nuri
Journal for Technology and Science Vol. 3 No. 3 (2026): Journal for Technology and Science
Publisher : PT ANTIS INTERNATIONAL PUBLISHER

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.61796/ipteks.v3i3.527

Abstract

Objective: This research presents a comprehensive study of the input characteristics of an NPN transistor in a common-emitter configuration using NI Multisim 14.2 at a constant output voltage across the transistor (VCE = 2 V). Method: The research methodology focuses on the increase in base current (Ig)   as a result of the voltage increase (VBE). The switching voltage, i.e., the critical operating point, is determined using the dynamic resistance equation. Results: The results obtained from NI Multisim 14.2 and the mathematical equations for a silicon diode that accepts or consumes a lower voltage (approximately 0.8 V) are crucial. Novelty: The most important conclusion of this research is that these calculations, relating to base current, emitter-base voltage, and a low dynamic resistance (7.58 Ω), form the basis for designing electronic circuits and the switching and amplification processes they undergo.
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