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All Journal International Journal of Power Electronics and Drive Systems (IJPEDS) Bulletin of Electrical Engineering and Informatics
Hasbullah, Nurul Fadzlin
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Control & Systems Engineering Electrical & Electronics Engineering

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An interleaved DC charging solar system for electric vehicle Faudzi, Ahmad Aiman Mohd; Toha, Siti Fauziah; Hanifah, Rabiatuladawiah Abu; Hasbullah, Nurul Fadzlin; Azam Kamisan, Nor
International Journal of Power Electronics and Drive Systems (IJPEDS) Vol 12, No 4: December 2021
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijpeds.v12.i4.pp2414-2422

Abstract

This paper investigates the performance of conventional boost converter, 2-phase interleaved boost converter and 3-phase interleaved boost converter for renewable energy applications especially for solar-powered energy. The advantages of using coupled inductors in interleaved boost converters include increased system efficiency, reduced core size, and also reduced overall current and voltage ripples which increases the lifetime of renewable energy resources. In this paper, the uses of boost converters have been focused explicitly on the interleaved DC-DC charging from a solar-powered battery into electric vehicle (EV) battery storage. Hence, this paper aims to investigate a suitable charging process mechanism from a photovoltaic (PV) battery storage system into EV powered battery system. Using the application of a boost converter with reduced ripple current and ripple voltage decreases switching losses and increases conversion efficiency. The simulation is carried out by using Simulink/MATLAB to evaluate the performance of each boost converter. The results successfully demonstrate the ability of the proposed charging system with an energy efficiency of 90%.
Effect of proton radiation on gallium nitride light emitting diodes Baba, Tamana; Husni, Muhammad Hazeeq; Saidin, Norazlina; Hasbullah, Nurul Fadzlin
Bulletin of Electrical Engineering and Informatics Vol 13, No 1: February 2024
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/eei.v13i1.6205

Abstract

The compound semiconductor gallium nitride offers enormous potential for facilitating economic expansion in the silicon-based semiconductor industry, which is currently seeing decreasing performance returns compared to investment costs. Its high electron mobility and electric field strength at the material level have already demonstrated enormous potential for photonics and high-frequency communications applications. However, its application in devices used in the radiation-prone environment is hindered by degradation and failure caused by the radiation. In this paper, the effect of proton radiation on the electrical properties of InGaN light emitting diodes (LEDs) for the fluence range of 1×1014 cm-2 to 3×1014 cm-2 is performed. On comparing the results before and after radiation, it is found that radiation mainly affected the reverse IV characteristics of the device with little or no effect on forward IV or CV characteristics. Apart from the electric properties, the optical properties of the LEDs show improvement after radiation as the light intensity increases post-irradiation.
Co-Authors Azam Kamisan, Nor Baba, Tamana Faudzi, Ahmad Aiman Mohd Hanifah, Rabiatuladawiah Abu Husni, Muhammad Hazeeq Saidin, Norazlina Toha, Siti Fauziah