Article Per Year (5 Year)
p-Index From 2021 - 2026
0.444
P-Index
This Author published in this journals
All Journal International Journal of Power Electronics and Drive Systems (IJPEDS)
Tacca, Hernan Emilio
Unknown Affiliation
Control & Systems Engineering Electrical & Electronics Engineering

Published : 2 Documents Claim Missing Document
Claim Missing Document
Check
Articles

Found 2 Documents
Search

 1 
Stackable independent power switch cell architecture for isolation voltage summation using WBG devices Carrá, Martín Javier; Tacca, Hernan Emilio; Lipovetzky, José
International Journal of Power Electronics and Drive Systems (IJPEDS) Vol 15, No 4: December 2024
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijpeds.v15.i4.pp2007-2018

Abstract

Power electronics is a critical driver of innovation in industries like renewable energy, electric vehicles, and consumer electronics. While silicon (Si) devices have been dominant for five decades, escalating demands for higher power density expose limitations in terms of blocking voltage capacity, operational temperature, and switching frequency. Wide band-gap (WBG) materials, such as silicon carbide (SiC) and gallium nitride (GaN), offer compelling alternatives with low input capacitance, reduced losses, and excellent thermal characteristics. In addition, expanding electrical capabilities involves constructing an array of devices, such as series-connected power MOSFETs. This configuration offers advantages like higher blocking voltage, lower conduction losses, and reduced costs. This paper introduces the design of a fast-switching, stackable switching unit cell (SSUC) utilizing SiC MOSFET devices as power components. The SSUC facilitates the creation of versatile compound switches. To protect the power switch from harmful voltages and current spikes, the design incorporates both an active voltage clamp and a snubber with energy recovery. This feature extends the number of stages that can be connected in series. Experiments with a three-stage compound device, successfully tested at 3 kV, validate the practical applicability and flexibility of this concept.
High voltage asymmetric converter for electrostatic particle accelerators Fanego, Diego Alberto; Sandini, Orlando Silvio; Tacca, Hernan Emilio; Kreiner, Andres Juan
International Journal of Power Electronics and Drive Systems (IJPEDS) Vol 17, No 1: March 2026
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijpeds.v17.i1.pp553-571

Abstract

This work presents several topologies of asymmetric high voltage converters for electrostatic particle accelerators. The options are compared on the basis of their transfer functions and the magnetic components required, and the most suitable for the intended purpose is selected. Simulations and measurement results of the prototype, which has symmetrical voltage output and soft switching in the main transistor, are presented. The prototype built features output voltages of 10 kVand-10 kV, the converter uses a single common command ground for the transistors simplifying its drivers, and also by means of the presented snubber circuit it recovers energy during soft switching.
Co-Authors Carrá, Martín Javier Fanego, Diego Alberto Kreiner, Andres Juan Lipovetzky, Jose Sandini, Orlando Silvio