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Agung Setiabudi
University of Miyazaki
Computer Science & IT Electrical & Electronics Engineering

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High Speed and Low Pedestal Error Bootstrapped CMOS Sample and Hold Circuit Agung Setiabudi; Hiroki Tamura; Koichi Tanno
International Journal of Electrical and Computer Engineering (IJECE) Vol 8, No 6: December 2018
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (572.475 KB) | DOI: 10.11591/ijece.v8i6.pp4148-4156

Abstract

A new high speed, low pedestal error bootstrapped CMOS sample and hold (S/H) circuit is proposed for high speed analog-to-digital converter (ADC). The proposed circuit is made up of CMOS transmission gate (TG) switch and two new bootstrap circuits for each transistor in TG switch. Both TG switch and bootstrap circuits are used to decrease channel charge injection and on-resistance input signal dependency. In result, distortion can be reduced. The decrease of channel charge injection input signal dependency also makes the minimizing of pedestal error by adjusting the width of NMOS and PMOS of TG switch possible. The performance of the proposed circuit was evaluated using HSPICE 0.18-m CMOS process. For 50 MHz sinusoidal 1 V peak-to-peak differential input signal with a 1 GHz sampling clock, the proposed circuit achieves 2.75 mV maximum pedestal error, 0.542 mW power consumption, 90.87 dB SNR, 73.50 SINAD which is equal to 11.92 bits ENOB, -73.58 dB THD, and 73.95 dB SFDR.
CMOS Temperature Sensor with Programmable Temperature Range for Biomedical Applications Agung Setiabudi; Hiroki Tamura; Koichi Tanno
International Journal of Electrical and Computer Engineering (IJECE) Vol 8, No 2: April 2018
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (1626.699 KB) | DOI: 10.11591/ijece.v8i2.pp946-953

Abstract

A CMOS temperature sensor circuit with programmable temperature range is proposed for biomedical applications. The proposed circuit consists of temperature sensor core circuit and programmable temperature range digital interface circuit. Both circuits are able to be operated at 1.0 V. The proposed temperature sensor circuit is operated in weak inversion region of MOSFETs. The proposed digital interface circuit converts current into time using Current-to-Time Converter (ITC) and converts time to digital data using counter. Temperature range can be programmed by adjusting pulse width of the trigger and clock frequency of counter. The proposed circuit was simulated using HSPICE with 1P, 5M, 3-wells, 0.18-μm CMOS process (BSIM3v3.2, LEVEL53). From the simulation of proposed circuit, temperature range is programmed to be 0 °C to 100 °C, it is obtained that resolution of the proposed circuit is 0.392 °C with -0.89/+0.29 °C inaccuracy and the total power consumption is 22.3 μW in 25 °C. 
Co-Authors Hiroki Tamura Koichi Tanno