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Abdoul Rjoub
Jordan University of Science and Technology
Computer Science & IT Electrical & Electronics Engineering

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Journal : International Journal of Electrical and Computer Engineering

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Courses timetabling based on hill climbing algorithm Abdoul Rjoub
International Journal of Electrical and Computer Engineering (IJECE) Vol 10, No 6: December 2020
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijece.v10i6.pp6558-6573

Abstract

In addition to its monotonous nature and excessive time requirements, the manual school timetable scheduling often leads to more than one class being assigned to the same instructor, or more than one instructor being assigned to the same classroom during the same slot time, or even leads to exercise in intentional partialities in favor of a particular group of instructors. In this paper, an automated school timetable scheduling is presented to help overcome the traditional conflicts inherent in the manual scheduling approach. In this approach, hill climbing algorithms have been modified to transact hard and soft constraints. Soft constraints are not easy to be satisfied typically, but hard constraints are obligated. The implementation of this technique has been successfully experimented in different schools with various kinds of side constraints. Results show that the initial solution can be improved by 72% towards the optimal solution within the first 5 seconds and by 50% from the second iteration while the optimal solution will be achieved after 15 iterations ensuring that more than 50% of scientific courses will take place in the early slots time while more than 50% of non-scientific courses will take place during the later time's slots.
Accurate leakage current models for MOSFET nanoscale devices Abdoul Rjoub; Mamoun Mistarihi; Nedal Al Taradeh
International Journal of Electrical and Computer Engineering (IJECE) Vol 10, No 3: June 2020
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (1038.842 KB) | DOI: 10.11591/ijece.v10i3.pp2313-2321

Abstract

This paper underlines a closed forms of MOSFET transistor’sleakage current mechanisms inthe sub 100nmparadigm.The incorporation of draininduced barrier lowering (DIBL), Gate Induced Drain Lowering (GIDL) and body effect (m) on the sub-threshold leakage (Isub) wasinvestigated in detail. The Band-To-Band Tunneling (IBTBT) due to the source and Drain PN reverse junction were also modeled witha close and accurate model using a rectangularapproximation method (RJA). The three types of gate leakage (IG) were also modeled and analyzed for parasitic (IGO), inversion channel (IGC), and gate substrate (IGB).In addition, the leakage resources due to the aggressive reduction in the oxide thickness (
Co-Authors Mamoun Mistarihi Nedal Al Taradeh