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Mamoun Mistarihi
Jordan University of Science and Technology
Computer Science & IT Electrical & Electronics Engineering

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Accurate leakage current models for MOSFET nanoscale devices Abdoul Rjoub; Mamoun Mistarihi; Nedal Al Taradeh
International Journal of Electrical and Computer Engineering (IJECE) Vol 10, No 3: June 2020
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (1038.842 KB) | DOI: 10.11591/ijece.v10i3.pp2313-2321

Abstract

This paper underlines a closed forms of MOSFET transistor’sleakage current mechanisms inthe sub 100nmparadigm.The incorporation of draininduced barrier lowering (DIBL), Gate Induced Drain Lowering (GIDL) and body effect (m) on the sub-threshold leakage (Isub) wasinvestigated in detail. The Band-To-Band Tunneling (IBTBT) due to the source and Drain PN reverse junction were also modeled witha close and accurate model using a rectangularapproximation method (RJA). The three types of gate leakage (IG) were also modeled and analyzed for parasitic (IGO), inversion channel (IGC), and gate substrate (IGB).In addition, the leakage resources due to the aggressive reduction in the oxide thickness (
Co-Authors Abdoul Rjoub Nedal Al Taradeh