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All Journal TELKOMNIKA (Telecommunication Computing Electronics and Control) Indonesian Journal of Electrical Engineering and Computer Science
Firas Natheer Abdul-Kadir
University of Mosul
Computer Science & IT

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Investigation and design of ion-implanted MOSFET based on (18 nm) channel length Firas Natheer Abdul-kadir; Khalid khaleel Mohammad; Yasir Hashim
TELKOMNIKA (Telecommunication Computing Electronics and Control) Vol 18, No 5: October 2020
Publisher : Universitas Ahmad Dahlan

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.12928/telkomnika.v18i5.15958

Abstract

The aim of this study is to invistgate the characteristics of Si-MOSFET with 18 nm length of ion implemented channel. Technology computer aided design (TCAD) tool from Silvaco was used to simulate the MOSFET’s designed structure in this research. The results indicate that the MOSFET with 18 nm channel length has cut-off frequency of 548 GHz and transconductance of 967 μS, which are the most important factors in calculating the efficiency and improving the performance of the device. Also, it has threshold voltage of (-0.17 V) in addition obtaining a relatively small DIBL (55.11 mV/V). The subthreshold slope was in high value of 307.5 mV/dec. and this is one of the undesirable factors for the device results by short channel effect, but it does not reduce its performance and efficiency in general.
Characterization of silicon tunnel field effect transistor based on charge plasma Firas Natheer Abdul-kadir; Faris Hassan Taha
Indonesian Journal of Electrical Engineering and Computer Science Vol 25, No 1: January 2022
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v25.i1.pp138-143

Abstract

The aim of the proposed paper is an analytical model and realization of the characteristics for tunnel field-effect transistor (TFET) based on charge plasma (CP). One of the most applications of the TFET device which operates based on CP technique is the biosensor. CP-TFET is to be used as an effective device to detect the uncharged molecules of the bio-sample solution. Charge plasma is one of some techniques that recently invited to induce charge carriers inside the devices. In this proposed paper we use a high work function in the source (ϕ=5.93 eV) to induce hole charges and we use a lower work function in drain (ϕ=3.90 eV) to induce electron charges. Many electrical characterizations in this paper are considered to study the performance of this device like a current drain (ID) versus voltage gate (Vgs), ION/IOFF ratio, threshold voltage (VT) transconductance (gm), and sub-threshold swing (SS). The signification of this paper comes into view enhancement the performance of the device. Results show that high dielectric (K=12), oxide thickness (Tox=1 nm), channel length (Lch=42 nm), and higher work function for the gate (ϕ=4.5 eV) tend to best charge plasma silicon tunnel field-effect transistor characterization.
Co-Authors Faris Hassan Taha Khalid khaleel Mohammad Yasir Hashim