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R M Mehra
Sharda University, Knowledge Park- III, Greater Noida, Uttar Pradesh, 201306, India
Computer Science & IT Electrical & Electronics Engineering

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TCAD Simulations and Small Signal Modeling of DMG AlGaN/GaN HFET Rahis Kumar Yadav; Pankaj Pathak; R M Mehra
International Journal of Electrical and Computer Engineering (IJECE) Vol 7, No 4: August 2017
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (953.587 KB) | DOI: 10.11591/ijece.v7i4.pp1839-1849

Abstract

This article presents extraction of small signal model parameters and TCAD simulation of novel asymmetric field plated dual material gate AlGaN/GaN HFET first time. Small signal model is essential for design of LNA and microwave electronic circuit by using the proposed superior performance HFET structure. Superior performances of device are due to its dual material gate structure and field plate that can provide better electric field uniformity, suppression of short channel effects and improvement in carrier transport efficiency. In this article we used direct parameter extraction methodology in which S-parameters of device were measured using pinchoff cold FET biasing. The measured S-parameters are then transformed into Y-parameters to extract capacitive elements and then in to Z-parameters to extract series parasitic elements. Intrinsic parameters are extracted from Y-parameters after de-embedding all parasitic elements of devce. Microwave figure of merits and dc performance are also studied for proposed HFET. The important figure of merits of device reported in the paper include transconductance, drain conductance, current gain, transducer power gain, available power gain, maximum stable gain, maximum frequency of oscillation, cut-off frequency, stability factor and time delay. Reported results are validated with experimental and simulation results for consistency and accuracy.
Co-Authors Pankaj Pathak Rahis Kumar Yadav