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Asma Laribi
University Abou-BakrBelkaid
Computer Science & IT Electrical & Electronics Engineering

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Effect of Chirality and Oxide Thikness on the Performance of a Ballistic CNTFET Asma Laribi; Ahlam Guen Bouazza
International Journal of Electrical and Computer Engineering (IJECE) Vol 8, No 6: December 2018
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (1312.027 KB) | DOI: 10.11591/ijece.v8i6.pp4941-4950

Abstract

Since the discovery of 1D nano-object, they are constantly revealing significant physical properties. In this regard, carbon nanotube (CNT) is considered as a promising candidate for application in future nanoelectronics devices like carbon nanotube field effect transistor (CNTFET). In this work, the impact of chirality and gate oxide thikness on the electrical characteristics of a CNTFET are studied. The chiralities used are (5, 0), (10, 0), (19, 0), (26, 0), and the gate oxide thikness varied from 1 to 5 nm.This work is based on a numerical simulation program based on surface potential model. CNTFET Modeling is useful for semiconductor industries for nano scale devices manufacturing. From our results we have observed that the output current increases with chirality increasing.We have also highlight the importance of the gate oxide thickness on the drain current that increases when gate oxide is thin.
Co-Authors Ahlam Guen Bouazza