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All Journal International Journal of Electrical and Computer Engineering Bulletin of Electrical Engineering and Informatics Indonesian Journal of Electrical Engineering and Computer Science
Kamil Jadu Ali
Tikrit university
Computer Science & IT Electrical & Electronics Engineering

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Numerical analysis of the photovoltaic system inspection with active cooling Ahmed Hasan Mohammed; Ghanim Thiab Hasan; Kamil Jadu Ali
International Journal of Electrical and Computer Engineering (IJECE) Vol 11, No 4: August 2021
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijece.v11i4.pp2779-2789

Abstract

The use of solar energy may replace the present fossil fuel or gas to produce electricity. The goal of this study is to set up a simulation model to survey the performance of a photovoltaic thermal system (PV/T) based on the computational fluid dynamics (CFD) method. Ansys fluent software has been used for the simulation procedure. The electrical panel output and its efficiency were investigated numerically. In addition, the effect of variations in absorbed radiation on inlet fluid and absorber panel temperature on the system performance was investigated. The study was conducted for three cases, in a first case, where there is no refrigerant in the system and in the latter case, at constant fluid rate of the pump, whereas the third case with optimal pump operation. The numerical findings obtained from CFD simulators have been compared with the test records of the experimental results of the literature. The two results have a good agreement. From the obtained results, it can be noted that the system shows a good improvement for the electric net efficiency level of 3.52% with a lower reduction of the thermal system efficiency of 1.96% in comparison to the system when using the constantly high flow rate.
Notice of Retraction: Comparative evaluation of SiC/GaN “MOSFET” transistors under different switching conditions Ghanim Thiab Hasan; Ali Hlal Mutlaq; Kamil Jadu Ali
Bulletin of Electrical Engineering and Informatics Vol 11, No 2: April 2022
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/eei.v11i2.3445

Abstract

Notice of Retraction-----------------------------------------------------------------------After careful and considered review of the content of this paper by a duly constituted expert committee, this paper has been found to be in violation of IAES's Publication Principles.We hereby retract the content of this paper. Reasonable effort should be made to remove all past references to this paper.The presenting author of this paper has the option to appeal this decision by contacting beei@iaescore.com.-----------------------------------------------------------------------The aim of this paper is to conduct a mutual comparison of switching energy losses in cascade gallium nitride (GaN) and silicon "super junction" MOSFET” transistor, in both cases designed for a maximum operating voltage of (650 V). For the analysis of switching characteristics of transistors used double pulse test method by using detailed SPICE simulation model. Data on transient on and off processes were generated using the “LTspice” simulation package in a wide range of drain currents with two different gate resistance values of the tested transistors. The total energy losses in the GaN have been simulated during one transistor at (on and off cycle). The obtained results indicate that the superior switching characteristics of GaN devices for a drain current of (30 A) is five to eight times less than the switching characteristics of silicon “MOSFET” transistor when compared to silicon components, especially during operation of transistors with high drain currents.
An empirical correlation of ambient temperature impact on PV module considering natural convection Kamil Jadu Ali; Ahmed Hasan Mohammad; Ghanim Thiab Hasan
Indonesian Journal of Electrical Engineering and Computer Science Vol 19, No 2: August 2020
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v19.i2.pp627-634

Abstract

In this paper, the effect of the ambient temperature on the PV modules for different angles of inclinations and different intensities of the solar radiation on the surface of the PV module is considered by using empirical correlations for natural convection. An analytical model based on the energy balance equilibrium between the PV module and the environment conditions has been used. Also an expression for calculating the electric power of silicon PV modules in a function of the ambient temperature, the intensity of the solar radiation, the incident angle of the solar radiation to the surface of the PV module and the efficiency of the PV modules at STC conditions have been used. By comparing the obtained both results, it can be seen that the largest deviation between the power values obtained by the analytical model and expression is about (5 %). The results obtained indicates that in the case of a small number of PV modules corresponding to the required number for an average household, it is more economical to invest additional resources in increasing the PV module's surface area than in case of the PV module with sun tracking system. 
Design of current controlled instrumental amplifier by using complementary metallic oxide semiconductor technology Ghanim Thiab Hasan; Kamil Jadu Ali; Ali Hlal Mutlaq
Indonesian Journal of Electrical Engineering and Computer Science Vol 29, No 2: February 2023
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v29.i2.pp652-657

Abstract

In this paper, a complementary metal oxide semiconductor (CMOS) instrumental amplifier was designed and implemented in order to provide the possibility of controlling the current and voltage gain. The proposed instrumentation amplifier consists of three conveyors with active resistor. The parasitic resistance value (Rx) was reduced with a large bandwidth level in addition to achieving a high common mode rejection ratio (CMRR). Simulation was performed by using 0.35μm CMOS technology by using the advanced design system (ADS) software. The results obtained prove that the proposed circuit has a good efficiency with higher degree of CMRR in comparison with other amplifiers designed and implemented in other similar works.
Modeling of magnetic sensitivity of the metal-oxide-semiconductor field-effect transistor with double gates Ghanim Thiab Hasan; Ali Hlal Mutlaq; Kamil Jadu Ali; Mohammed Ayad Saad
International Journal of Electrical and Computer Engineering (IJECE) Vol 13, No 3: June 2023
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijece.v13i3.pp2632-2639

Abstract

In this paper, we investigated the effect of magnetic field on the carrier transport phenomenon in metal-oxide-semiconductor field-effect transistor (MOSFET) with double gates by examining the behavior of the semiconductor under the Lorentz force and a constant magnetic field. Various behaviors within the channel have been simulated including the potential distribution, conduction and valence bands, total current density, total charge density and the magnetic field. The results obtained indicate that this modulation affects the electrical characteristics of the device such as on-state current (ION), subthreshold leakage current (IOF), threshold voltage (VTh), and the Hall voltage (VH) is induced by the magnetic field. The change in threshold voltage caused by the magnetic field has been observed to affect the switching characteristics of the device, such as speed and power loss, as well as the threshold voltage VTh and (ION/IOF) ratio. Note that it is reduced by 10-3 V. 102 for magnetic fields of ±6 and ±5.5 tesla respectively.
Co-Authors Ahmed Hasan Mohammad Ahmed Hasan Mohammed Ali Hlal Mutlaq Ali Hlal Mutlaq Ghanim Thiab Hasan Mohammed Ayad Saad