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All Journal International Journal of Electrical and Computer Engineering Bulletin of Electrical Engineering and Informatics Indonesian Journal of Electrical Engineering and Computer Science
Kamil Jadu Ali
Tikrit university
Computer Science & IT Electrical & Electronics Engineering

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Journal : International Journal of Electrical and Computer Engineering

 1 
Numerical analysis of the photovoltaic system inspection with active cooling Ahmed Hasan Mohammed; Ghanim Thiab Hasan; Kamil Jadu Ali
International Journal of Electrical and Computer Engineering (IJECE) Vol 11, No 4: August 2021
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijece.v11i4.pp2779-2789

Abstract

The use of solar energy may replace the present fossil fuel or gas to produce electricity. The goal of this study is to set up a simulation model to survey the performance of a photovoltaic thermal system (PV/T) based on the computational fluid dynamics (CFD) method. Ansys fluent software has been used for the simulation procedure. The electrical panel output and its efficiency were investigated numerically. In addition, the effect of variations in absorbed radiation on inlet fluid and absorber panel temperature on the system performance was investigated. The study was conducted for three cases, in a first case, where there is no refrigerant in the system and in the latter case, at constant fluid rate of the pump, whereas the third case with optimal pump operation. The numerical findings obtained from CFD simulators have been compared with the test records of the experimental results of the literature. The two results have a good agreement. From the obtained results, it can be noted that the system shows a good improvement for the electric net efficiency level of 3.52% with a lower reduction of the thermal system efficiency of 1.96% in comparison to the system when using the constantly high flow rate.
Modeling of magnetic sensitivity of the metal-oxide-semiconductor field-effect transistor with double gates Ghanim Thiab Hasan; Ali Hlal Mutlaq; Kamil Jadu Ali; Mohammed Ayad Saad
International Journal of Electrical and Computer Engineering (IJECE) Vol 13, No 3: June 2023
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijece.v13i3.pp2632-2639

Abstract

In this paper, we investigated the effect of magnetic field on the carrier transport phenomenon in metal-oxide-semiconductor field-effect transistor (MOSFET) with double gates by examining the behavior of the semiconductor under the Lorentz force and a constant magnetic field. Various behaviors within the channel have been simulated including the potential distribution, conduction and valence bands, total current density, total charge density and the magnetic field. The results obtained indicate that this modulation affects the electrical characteristics of the device such as on-state current (ION), subthreshold leakage current (IOF), threshold voltage (VTh), and the Hall voltage (VH) is induced by the magnetic field. The change in threshold voltage caused by the magnetic field has been observed to affect the switching characteristics of the device, such as speed and power loss, as well as the threshold voltage VTh and (ION/IOF) ratio. Note that it is reduced by 10-3 V. 102 for magnetic fields of ±6 and ±5.5 tesla respectively.
Co-Authors Ahmed Hasan Mohammad Ahmed Hasan Mohammed Ali Hlal Mutlaq Ali Hlal Mutlaq Ghanim Thiab Hasan Mohammed Ayad Saad