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M Azizi
Larbi Ben M’Hidi university, Algeria
Computer Science & IT Electrical & Electronics Engineering

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Effect of Mobility on (I-V) Characteristics of Gaas MESFET M Azizi; C Azizi
International Journal of Electrical and Computer Engineering (IJECE) Vol 7, No 1: February 2017
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (475.002 KB) | DOI: 10.11591/ijece.v7i1.pp169-175

Abstract

We present in this paper an analytical model of the current–voltage (I-V) characteristics for submicron GaAs MESFET transistors. This model takes into account the analysis of the charge distribution in the active region and incorporate a field depended electron mobility, velocity saturation and charge build-up in the channel. We propose in this frame work an algorithm of simulation based on mathematical expressions obtained previously. We propose a new mobility model describing the electric field-dependent. The predictions of the simulator are compared with the experimental data [01] and have been shown to be good.
Co-Authors C Azizi