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Ghaffour Kherreddine
University of Tlemcen
Computer Science & IT Electrical & Electronics Engineering

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Journal : International Journal of Electrical and Computer Engineering

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Modelling Electronic Characteristic of InP/InGaAs Double Heterojunction Bipolar Transistor Berrichi Yamina; Ghaffour Kherreddine
International Journal of Electrical and Computer Engineering (IJECE) Vol 5, No 3: June 2015
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (163.184 KB) | DOI: 10.11591/ijece.v5i3.pp525-530

Abstract

In this paper, we are interested in studying InP/InGaAs heterojunction bipolar transistor NPN type. First and for most we should describe the structure of our simulation, then, we ploted at room temperature: Energy band diagram, Gummel plot, IC-VC characteristic and conduction bands for different values of VBE.  The simulation of this structure has demonstrated the validity of our model and the method of the simulation.
Co-Authors Berrichi Yamina