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Nyi Raden Poespawati
Universitas Indonesia
Computer Science & IT Electrical & Electronics Engineering

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III-Nitride Semiconductors based Optical Power Splitter Device Design for underwater Application Retno Wigajatri Purnamaningsih; Nyi Raden Poespawati; Elhadj Dogheche
International Journal of Electrical and Computer Engineering (IJECE) Vol 8, No 5: October 2018
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (644.467 KB) | DOI: 10.11591/ijece.v8i5.pp3866-3874

Abstract

In this paper, we introduce III-nitrides based 1× 4 optical power splitter for underwater optical communication applications. To the best of our knowledge, this is a first study for the design of multimode interference (MMI) and four-branch taper waveguide based on GaN/sapphire. The microstructure of GaN semiconductor grown by Metalorganic Chemical Vapor Deposition (MOCVD) on (0001) sapphire reported. The numerical experimental is conducted using the 3D FD-BPM method. The results showed that the optical power splitter has an excess loss of 0.013 dB and imbalance of 0.17 dB. The results open the opportunity for the future device using this technology for the underwater application.
Co-Authors Elhadj Dogheche Retno Wigajatri Purnamaningsih