Tuan Anh Vu
VNU University of Engineering and Technology

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Low-Power D-Band CMOS Amplifier for Ultrahigh-Speed Wireless Communications Tuan Anh Vu; Kyoya Takano; Minoru Fujishima
International Journal of Electrical and Computer Engineering (IJECE) Vol 8, No 2: April 2018
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (2514.737 KB) | DOI: 10.11591/ijece.v8i2.pp933-938

Abstract

This paper presents a low-power D-Band amplifier suitable for ultrahigh-speed wireless communications. The three-stage fully differential amplifier with capacitive neutralization is fabricated in 40 nm CMOS provided by TSMC. Measurement results show that the D-band amplifier obtains a peak gain of 9.6 dB over a -3 dB bandwidth from 138 GHz to 164.5 GHz. It exhibits an output 1 dB compression point (OP1dB) of 1.5 dbm at the center frequency of 150 GHz. The amplifier consumes a low power of 27.3 mW from a 0.7 V supply voltage while its core occupies a chip area of 0.06 mm2.