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Saadi Adil
Moulay Ismail University
Computer Science & IT Electrical & Electronics Engineering

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Analytic Estimation of Two-Dimensional Electron Gas Density and Current-Voltage Characteristic in AlGaN/GaN HEMT’s Asmae Babaya; Bri Seddik; Saadi Adil
International Journal of Electrical and Computer Engineering (IJECE) Vol 8, No 2: April 2018
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (409.08 KB) | DOI: 10.11591/ijece.v8i2.pp954-962

Abstract

This paper is mainly dedicated to understand the phenomena governing the formation of two-dimensional electron gas (2DEG) confined in the quantum well which hold the role of the channel in the high electron density transistors (HEMT) based on AlGaN / GaN heterojunction. The theory takes into account: the crystal structure, the spontaneous and piezoelectric polarization concept, the formation mechanism of two-dimensional electron gas at the AlGaN / GaN interface, the approximate resolution of the Poisson and Schrödinger equations to determine the density of Two-dimensional electron gas after the analytical formula of the current-voltage characteristic is established. Our study is also concerned with the dependence of the two-dimensional electron gas density on the following technological parameters: Aluminum molare fraction, AlGaN layer thickness and AlGaN layer doping, In order to control the influence of these parameters on the device performance. Finally, the current-voltage characteristic which reflects the variation of the drain-source current as a function of the modulation of the gate voltage has been discussed.
Co-Authors Asmae Babaya Bri Seddik